Intrinsic persistent spin helix state in two-dimensional group-IV monochalcogenide 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>M</mml:mi><mml:mi>X</mml:mi></mml:mrow></mml:math>
 monolayers (
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>M</mml:mi><mml:mo>=</mml:mo><mml:mi>Sn</mml:mi></mml:mrow></mml:math>
 or Ge and 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>X</mml:mi><mml:mo>=</mml:mo><mml:mi mathvariant="normal

Absor, Moh. Adhib Ulil; Ishii, Fumiyuki

doi:10.1103/physrevb.100.115104

Cited by 56 publications

(48 citation statements)

References 56 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This result has a similarity with the previous result of MX with black phosphorene lattice structure. However, in black phosphorene, the different band structure was observed [16]. Our calculated DOS projected to the atomic orbitals confirmed that the VBM is dominated by a mixture of X-pz and M-pz.…”

Section: ■ Results and Discussionsupporting

confidence: 60%

Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method

et al. 2020

Self Cite

View full text Add to dashboard Cite

The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, Te) exhibiting a pair inplane Rashba rotation of the spin textures. A strong correlation has also been found between the size of the Rashba parameter and the atomic number of chalcogen atom for Γ and M point in the first Brillouin zone. Our investigation clarifies that the buckled square lattice are promising for inducing the substantial Rashba splitting suggesting that the present system is promising for spintronics device.

show abstract

Section: ■ Results and Discussionsupporting

confidence: 60%

Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…Owing to the unidirectional spin orientation along the out‐of‐plane direction, the SnTe monolayer is predicted to possess intrinsic persistent spin helix (PSH), which is beneficial for the prolongation of spin lifetime. [ 112 ] The PSH can also be reversed by reversing the in‐plane ferroelectric polarization. Later, Sławińska et al.…”

Section: D‐ferroelectric‐based Applicationsmentioning

confidence: 99%

“…[68a] Owing to the unidirectional spin orientation along the outof-plane direction, the SnTe monolayer is predicted to possess intrinsic persistent spin helix (PSH), which is beneficial for the prolongation of spin lifetime. [112] The PSH can also be reversed by reversing the in-plane ferroelectric polarization. Later, Sławińska et al proved that the PSH as well as a sizable spin Hall effect can coexist in the SnTe thin films with odd layer, based on which they developed an all-in-one spin transistor.…”

Section: Spintronicsmentioning

confidence: 99%

Review on Recent Developments in 2D Ferroelectrics: Theories and Applications

2021

View full text Add to dashboard Cite

Although only a few 2D materials have been predicted to possess ferroelectricity, 2D ferroelectrics are expected to play a dominant role in the upcoming nano era as important functional materials. The ferroelectric properties of 2D ferroelectrics are significantly different than those of traditional bulk ferroelectrics owing to their intrinsic size and surface effects. To date, 2D ferroelectrics have been reported to exhibit diverse properties ranging from bulk photovoltaic and piezoelectric/pyroelectric effects to the spontaneous valley and spin polarization. These properties are either dependent on ferroelectric polarization or coupled with it for easy electric control, thus making 2D ferroelectrics applicable to multifunctional nanodevices. At present, cumulative efforts are being made to explore 2D ferroelectrics in theories, experiments, and applications. Herein, such theories and methods are briefly introduced. Subsequently, intrinsic and extrinsic origins of 2D ferroelectricity are separately summarized. In addition, invented or laboratory-validated 2D ferroelectric-based applications are listed. Finally, the existing challenges and prospects of 2D ferroelectrics are discussed.

show abstract

“…The SOC interaction was included self consistently in all calculations by using jdependent pseudopotentials [44]. The spin textures in the k-space were calculated using the spin density matrix of the spinor wave functions obtained from the DFT calculations that we applied recently to various 2D materials [10,12,16,26,29,[45][46][47][48].…”

Section: ■ Computational Detailsmentioning

confidence: 99%

Polarity Effect on the Electronic Structure of Molybdenum Dichalcogenides MoXY (X, Y = S, Se): A Computational Study Based on Density-Functional Theory

2021

Self Cite

View full text Add to dashboard Cite

Computational research based on the Density Functional Theory (DFT) has been performed to explore the electronic structure of monolayer material Transition Metal Dichalcogenides (TMDCs) Molybdenum Dichalcogenides MoXY (X; Y = S; Se) in the first Brillouin zone by breaking its mirror symmetry due to the polarity effect. Our study discovered that Rashba spin-splitting could be identified around the Γ point by proposing the polarity effect on the system. Moreover, the anisotropic characteristic of Rashba spin-splitting in this system can be explicitly analyzed by using perturbation theory and the third-order symmetry group analysis. By performing the spin textures analysis, this research also recognizes the in-plane direction of spin textures. The tunable characteristic of the Rashba parameter of this monolayer polar MoSSe system under the strain effects control exhibits its potential to be the candidate of semiconductor material for the Spin Field Effect Transistor (SFET) device.

show abstract

Intrinsic persistent spin helix state in two-dimensional group-IV monochalcogenide MX monolayers ( M=Sn or Ge and X=
Moh. Adhib Ulil Absor
¹
,
Fumiyuki Ishii
²

Cited by 56 publications

References 56 publications

Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method

Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method

Review on Recent Developments in 2D Ferroelectrics: Theories and Applications

Polarity Effect on the Electronic Structure of Molybdenum Dichalcogenides MoXY (X, Y = S, Se): A Computational Study Based on Density-Functional Theory

Contact Info

Product

Resources

About

Intrinsic persistent spin helix state in two-dimensional group-IV monochalcogenide MX monolayers ( M=Sn or Ge and X=Moh. Adhib Ulil Absor1, Fumiyuki Ishii2

Cited by 56 publications

References 56 publications

Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method

Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method

Review on Recent Developments in 2D Ferroelectrics: Theories and Applications

Polarity Effect on the Electronic Structure of Molybdenum Dichalcogenides MoXY (X, Y = S, Se): A Computational Study Based on Density-Functional Theory

Contact Info

Product

Resources

About

Intrinsic persistent spin helix state in two-dimensional group-IV monochalcogenide MX monolayers ( M=Sn or Ge and X=
Moh. Adhib Ulil Absor
¹
,
Fumiyuki Ishii
²