Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers

Abstract

The intrinsic resistance peak (ridge) structures were recently found to appear in the carrier density dependence plot of the resistance of the AB-stacked multilayer graphene with even numbers of layers. The ridges are due to topological changes in the Fermi surface. Here, these structures were studied in AB-stacked multilayer graphene with odd numbers of layers (5 and 7 layers) by performing experiments using encapsulated high-quality graphene samples equipped with top and bottom gate electrodes. The intrinsic resistance peaks that appeared on maps plotted with respect to the carrier density and perpendicular electric field showed particular patterns depending on graphene's crystallographic structure, and were qualitatively different from those of graphene with even numbers of layers. Numerical calculations of the dispersion relation and semi-classical resistivity using information based on the Landau level structure determined by the magnetoresistance oscillations, revealed that the difference stemmed from the even-odd layer-number effect on the electronic band structure.(Corresponding Author yagi@hiroshima-u.ac.jp)

Possible pair-graphene structures govern the thermodynamic properties of arbitrarily stacked few-layer graphene

“…The above results confirm that, in addition to van der Waals interactions, phonon interactions occur between graphene layers in few-layer graphene with odd layer counts. In fact, a pair-graphene structure with a more stable energy state has been identified in few-layer graphene 49 – 53 . In few-layer graphene, there is an even–odd layer number effect: the band structures of 2 N (N = 1, 2, 3,…) layer graphene exhibits N bilayer-like bands, and 2 N + 1 layer graphene additionally exhibits a monolayer-like band.…”

Magnetotransport study of the mini-Dirac cone in AB-stacked four- to six-layer graphene under perpendicular electric field

“…The screening length is a fitting parameters in our calculations. In the previous paper reporting intrinsic resistance peak (ridge) structures in AB-stacked multilayer graphene, we chose 0.45 nm [31]. In this work, we used the same value of λ for calculating the dispersion relations.…”

“…The recently found intrinsic resistance peak structures arising from topological changes in the Fermi surface [27,[29][30] are expected to be partly due to mini-Dirac cones. In AB-stacked four-layer [27,29,31], five-layer [31], six-layer [30], and seven-layer graphene [31], the carrier density dependence of the resistivity shows peak structures specific to the band structures, and maps of the resistivity as a function of perpendicular electric flux density and carrier density show ridge structures. [27,[29][30][31].…”

“…In AB-stacked four-layer [27,29,31], five-layer [31], six-layer [30], and seven-layer graphene [31], the carrier density dependence of the resistivity shows peak structures specific to the band structures, and maps of the resistivity as a function of perpendicular electric flux density and carrier density show ridge structures. [27,[29][30][31]. Numerical calculations of the dispersion relation in the presence of a perpendicular electric flux density indicated that the conspicuous ridges are due to mini-Dirac cones formed by the field.…”

“…The Landau-level structure, in particular, near = 0, is strikingly different from that for ⊥ = 0 (Figs. 6(d), 6(e)), which can be explained in terms of two sets of bilayer-like bands and a monolayer-like band[31][32]. The Landau levels for ⊥ ≠ 0 exhibit characteristic structure that extends radially from = 0 and = 0, as in the case of the four-layer graphene.…”