Intrinsic spin Hall conductivity in three-dimensional topological insulator/normal insulator heterostructures

Men’shov, V. N.; Shvets, I. A.; Тугушев, В. В.; Chulkov, Eugene V.

doi:10.1103/physrevb.96.075302

Cited by 12 publications

(14 citation statements)

References 56 publications

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“…As shown in Ref. [42], over a wide range of the model parameters, the low-energy states (n = 0) are clearly separated in energy from high-energy states (|n| 1…”

Section: Effective 2d Hamiltonian Of the Fmni/ti/fmni Trilayermentioning

confidence: 57%

“…We adopt the variational procedure for the energy functional, which has been developed in Ref. [42], to formulate the boundary problem for EF at the interfaces. The corresponding equations in the compact form are…”

Section: Effective 2d Hamiltonian Of the Fmni/ti/fmni Trilayermentioning

confidence: 99%

“…[43,44]) to project the complete set of the eigenstates of the problem ( 7) and ( 8) onto a subspace spanned by a minimal orthogonal basis set composed of the four low-lying states at κ = 0, ϕ σ 0 (z), and χ σ 0 (z), and then construct the perturbation theory for the low-energy states using this truncated basis in terms of a small value of H(κ, −i∂ z ) − H(0, −i∂ z ). By applying the scheme [42][43][44], we derive the effective 2D Hamiltonian specific for the TI film in the FMNI/TI/FMNI trilayer:…”

Section: Effective 2d Hamiltonian Of the Fmni/ti/fmni Trilayermentioning

confidence: 99%

“…Here, this important electrostatic phenomenon is included in the microscopic model through the spin-independent part of IP, U p , taken in the local approximation. The spatial behavior of the low-energy states near the interfaces is directly regulated by the strength of the potential U p [42]. Significantly, in the case of the strong IP, the EF vanishes at the interface as…”

Section: Effective 2d Hamiltonian Of the Fmni/ti/fmni Trilayermentioning

confidence: 99%

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Interface effects on the magnetic-proximity-induced quantized Hall response in heterostructures based on three-dimensional topological insulators

2019

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We report a theoretical study of the spin-dependent transport properties in heterostructures containing a three-dimensional topological insulator (TI) thin film and ferromagnetic normal insulator (FMNI) slab. Within the framework of a continual approach for the FMNI/TI/FMNI trilayer model, we reveal how the magnetic proximity effect at the TI/FMNI interface can influence an intrinsic Hall response of the system. We predict that the FMNI/TI/FMNI trilayer undergoes a transition into the quantum anomalous Hall phase either from the topologically trivial phase or from the quantum spin Hall phase, which is controlled by tuning the proximity-induced exchange field, the TI film thickness, and the TI band structure parameters. We draw the corresponding phase diagram of the FMNI/TI/FMNI trilayer. Moreover, we argue that the roughness at the TI/FMNI interfaces can cause the decomposition of the TI film into topologically distinct domains, which affects the Hall conductivity. We discuss the specifics of manifestation and complexities of observation of quantized conductivity in realistic TI/FMNI heterostructures.

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“…As shown in Ref. [42], over a wide range of the model parameters, the low-energy states (n = 0) are clearly separated in energy from high-energy states (|n| 1…”

Section: Effective 2d Hamiltonian Of the Fmni/ti/fmni Trilayermentioning

confidence: 57%

Section: Effective 2d Hamiltonian Of the Fmni/ti/fmni Trilayermentioning

confidence: 99%

Section: Effective 2d Hamiltonian Of the Fmni/ti/fmni Trilayermentioning

confidence: 99%

Section: Effective 2d Hamiltonian Of the Fmni/ti/fmni Trilayermentioning

confidence: 99%

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Interface effects on the magnetic-proximity-induced quantized Hall response in heterostructures based on three-dimensional topological insulators

2019

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“…Such systems are characterized by topological invariant Z 2 = 1 and helical gapless edge states protected by time-reversal symmetry from backscattering. As a result, charge carriers at the edges provide dissipationless spin-polarized current [8], making 2D TIs promising for applications in low-powerconsumption electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Regularities of the quantum spin Hall phase formation in three-dimensional tetradymite-like topological insulator thin films

et al. 2017

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We present first-principles calculations of electronic structure and topological properties of thin films of tetradymite-like binary, ternary, and quaternary compounds. Two-dimensional topological insulators were found, including two septuple layer films of PbBi 2 Te 4 with large band gap. We demonstrate that the Pb-based thin films inherit Z 2 dependence on the film thickness from the "parent" quintuple-layer compounds. An effective way to induce the topological phase transition in the trivial thin films is proposed that does not require substantial changes in the in-plane lattice parameter and surface crystal structure.

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Room Temperature Spin-to-Charge Conversion in Amorphous Topological Insulating Gd-Alloyed Bi_xSe_1–x/CoFeB Bilayers

Sahu

Yang

Fan

et al. 2023

ACS Appl. Mater. Interfaces

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Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TI’s exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge conversion (SCC) in amorphous Gd-alloyed Bi x Se1–x (BSG)/CoFeB bilayers fabricated by sputtering, which could be related to the amorphous TI surface states. Two methods have been employed to study SCC in BSG (t BSG = 6–16 nm)/CoFeB(5 nm) bilayers with different BSG thicknesses. First, spin pumping is used to generate a spin current in CoFeB and detect SCC by the inverse Edelstein effect (IEE). The maximum SCC efficiency (SCE) is measured to be as large as 0.035 nm (IEE length λ IEE) in a 6 nm thick BSG sample, which shows a strong decay when t BSG increases due to the increase of BSG surface roughness. The second method is THz time-domain spectroscopy, which reveals a small t BSG dependence of SCE, validating the occurrence of a pure interface state-related SCC. Furthermore, our angle-resolved photoemission spectroscopy data show dispersive two-dimensional surface states that cross the bulk gap until the Fermi level, strengthening the possibility of SCC due to the amorphous TI states. Our studies provide a new experimental direction toward the search for topological systems in amorphous solids.

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Intrinsic spin Hall conductivity in three-dimensional topological insulator/normal insulator heterostructures

Cited by 12 publications

References 56 publications

Interface effects on the magnetic-proximity-induced quantized Hall response in heterostructures based on three-dimensional topological insulators

Interface effects on the magnetic-proximity-induced quantized Hall response in heterostructures based on three-dimensional topological insulators

Regularities of the quantum spin Hall phase formation in three-dimensional tetradymite-like topological insulator thin films

Room Temperature Spin-to-Charge Conversion in Amorphous Topological Insulating Gd-Alloyed Bi_xSe_1–x/CoFeB Bilayers

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Intrinsic spin Hall conductivity in three-dimensional topological insulator/normal insulator heterostructures

Cited by 12 publications

References 56 publications

Interface effects on the magnetic-proximity-induced quantized Hall response in heterostructures based on three-dimensional topological insulators

Interface effects on the magnetic-proximity-induced quantized Hall response in heterostructures based on three-dimensional topological insulators

Regularities of the quantum spin Hall phase formation in three-dimensional tetradymite-like topological insulator thin films

Room Temperature Spin-to-Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1–x/CoFeB Bilayers

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Product

Resources

About

Room Temperature Spin-to-Charge Conversion in Amorphous Topological Insulating Gd-Alloyed Bi_xSe_1–x/CoFeB Bilayers