Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator

Dyrdał, A.; Barnaś, J.

doi:10.1002/pssr.201206202

Cited by 52 publications

(57 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…40 While still small, it is sufficient to help demonstrate the quantum spin Hall effect; this effect arises from the existence of a bulk gapped state and gapless conducting edge states at the boundaries, an example of a topological insulator. An interesting proposal is to control the bandgap using an external electric field, [41][42][43] transforming silicene from a topological insulator into a band insulator. Indeed, silicene has been predicted to have an extremely rich phase diagram of topological states with unique quantum states of matter such as a hybrid quantum Hall-quantum anomalous Hall state (the anomalous effect being the well-known quantum Hall effect in the absence of an external magnetic field) and a so-called valley-polarized metal (resulting from electron transfer from a conduction valley to a different hole valley), leading to the new field of spin valleytronics.…”

Section: -36mentioning

confidence: 99%

Is silicene the next graphene?

Voon

Guzmán-Verri

2014

MRS Bull.

View full text Add to dashboard Cite

This article reviews silicene, a relatively new allotrope of silicon, which can also be viewed as the silicon version of graphene. Graphene is a two-dimensional material with unique electronic properties qualitatively different from those of standard semiconductors such as silicon. While many other two-dimensional materials are now being studied, our focus here is solely on silicene. We first discuss its synthesis and the challenges presented. Next, a survey of some of its physical properties is provided. Silicene shares many of the fascinating properties of graphene, such as the so-called Dirac electronic dispersion. The slightly different structure, however, leads to a few major differences compared to graphene, such as the ability to open a bandgap in the presence of an electric field or on a substrate, a key property for digital electronics applications. We conclude with a brief survey of some of the potential applications of silicene.

show abstract

Section: -36mentioning

confidence: 99%

Is silicene the next graphene?

Voon

Guzmán-Verri

2014

MRS Bull.

View full text Add to dashboard Cite

show abstract

“…The existence of a Dirac cone results in the gapless excitations with a linear dispersion, which leads to the applications to optoelectronics and transistors in micro-electronics composed of only silicon atoms. Furthermore a graphene-like silicon may exhibit excellent electric properties such as tunable band-gap induced by quantum spin Hall effect and topological modification [11][12][13][14][15][16][17][18][19][20][21]. However, it should be noted that the graphene-like silicon dealt with in these theoretical works are assumed to be ''freestanding'', where the interaction between the substrate and silicon is not fully considered.…”

Section: Introductionmentioning

confidence: 99%

Structures of quasi-freestanding ultra-thin silicon films deposited on chemically inert surfaces

Baba¹,

Shimoyama²,

Hirao³

et al. 2014

Chemical Physics

View full text Add to dashboard Cite

a b s t r a c tSilicon thin films were deposited on a sapphire and a highly oriented pyrolytic graphite (HOPG), which have atomically flat and chemically inert surfaces. The electronic and geometrical structures of the films were analyzed by X-ray photoelectron spectroscopy (XPS) and polarization-dependent X-ray absorption fine structure (XAFS). It was found that the silicon K-edge XAFS spectra for ultra-thin silicon films thinner than 0.2 monolayer exhibited two distinct resonance peaks which were not observed for bulk silicon. The peaks were assigned to the resonance excitations from the Si 1s into the valence unoccupied orbitals with p ⁄ and r ⁄ characters. The average tilted angle of the p ⁄ orbitals was determined by the polarization dependencies of the peak intensities. It was demonstrated that direction of a part of the p ⁄ orbitals in silicon film is perpendicular to the surface. These results support the existence of quasi-freestanding singlelayered silicon films with sp 2 configuration.

show abstract

“…In general, the experimental investigations of silicene and other related Dirac materials are somewhat behind the theoretical ones. For example, there exist predictions for the above-mentioned transition from TI to BI [10,15], the sequence of Landau levels [16][17][18] and density of states in an external magnetic field [17,18], the quantum Hall [16] and spin Hall [19] effects, and optical [20][21][22] and magneto-optical [17,18] conductivities.…”

Section: Introductionmentioning

confidence: 99%

Landau levels and magnetic oscillations in gapped Dirac materials with intrinsic Rashba interaction

Tsaran

Sharapov

2014

Phys. Rev. B

View full text Add to dashboard Cite

A new family of the low-buckled Dirac materials which includes silicene, germanene, etc. is expected to possess a more complicated sequence of Landau levels than in pristine graphene. Their energies depend, among other factors, on the strength of the intrinsic spin-orbit (SO) and Rashba SO couplings and can be tuned by an applied electric field E z . We studied the influence of the intrinsic Rashba SO term on the energies of Landau levels using both analytical and numerical methods. The quantum magnetic oscillations of the density of states are also investigated. A specific feature of the oscillations is the presence of the beats with the frequency proportional to the field E z . The frequency of the beats becomes also dependent on the carrier concentration when Rashba interaction is present allowing experimental determination of its strength.

show abstract

Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator

Cited by 52 publications

References 17 publications

Is silicene the next graphene?

Is silicene the next graphene?

Structures of quasi-freestanding ultra-thin silicon films deposited on chemically inert surfaces

Landau levels and magnetic oscillations in gapped Dirac materials with intrinsic Rashba interaction

Contact Info

Product

Resources

About