1992
DOI: 10.1080/10408439208244586
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Intrinsic stress in sputter-deposited thin films

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Cited by 593 publications
(235 citation statements)
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References 155 publications
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“…energetic ions can be used for this purpose since they can trigger surface and bulk diffusion processes, 1,102 induce changes in the film structure and chemical composition, 103 and cause generation of internal stresses. [104][105][106][107] The high fluxes of ionized material available in HiPIMS have been found to allow for control of the phase formation in both elemental and compound films. One example is the control of the phase composition in Ta films.…”
Section: B Phase Composition Tailoring By Hipimsmentioning
confidence: 99%
“…energetic ions can be used for this purpose since they can trigger surface and bulk diffusion processes, 1,102 induce changes in the film structure and chemical composition, 103 and cause generation of internal stresses. [104][105][106][107] The high fluxes of ionized material available in HiPIMS have been found to allow for control of the phase formation in both elemental and compound films. One example is the control of the phase composition in Ta films.…”
Section: B Phase Composition Tailoring By Hipimsmentioning
confidence: 99%
“…26 Such strain is sensitive to the grain size and film microstructure and both these properties are influenced by the growth conditions. There are additional factors present in sputtered films 27 . Of particular note is a process referred to as "shot peening", in which compressive strain arises as a result of the sample being bombarded by energetic particles during growth.…”
Section: A Sample Strainmentioning
confidence: 99%
“…There are numerous studies that consider the influence of bias voltage on the development of residual stresses [10,16,21,23]. These studies agree that the extra energy supplied by the application of the bias voltage to the species reaching the substrate provides them with enough mobility, not only to fill the gaps between columns and thus reduce the tensile stresses [23], but also to produce an "ionpeening" effect.…”
Section: Evolution Of Cracking Patternsmentioning
confidence: 61%
“…In this case, when contiguous columns are close enough, interatomic attractive forces act between the column walls which stretch the columns and thus tensile stresses develop inside them if the film is well adhered. This is the so-called grain boundary relaxation mechanism to explain the origin of tensile growth stresses [10,16,[21][22][23]. Furthermore, the low deposition temperature and relatively high deposition pressure of the present experiments were conditions that led to low energy, and thus low mobility, of the species arriving at the surface of the substrate.…”
Section: Evolution Of Cracking Patternsmentioning
confidence: 91%
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