Intrinsic Surface Defects on 4H SiC Substrates

Abstract

We have investigated a point defect, common to all SiC substrates, that is thought to be a broken carbon bond. Electron paramagnetic resonance spectroscopy performed in combination with three different etching methods using p-type, n-type, and semi-insulating substrates demonstrate that the center lies near the surface of a wafer. The results suggest that on the order of 1013 cm-2 defects are removed within the first micron of the surface of a wafer.

Experimental and Theoretical Validation of Room Temperature Intrinsic Ferromagnetism in Cr3C2 Due to Interstitial Carbon Atoms

“…The g factor and linewidth topographies are assigned to the defects related to carbon dangling bonds in Cr 3 C 2 NCs. [ 6,7,32 ] Consequently, it is lucid to presume that the FM in C r 3 C 2 NCs is stemmed from defects, and the M s depends on the defects concentration.…”