2023
DOI: 10.1088/2752-5724/acdd87
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Intrinsic vacancy in 2D defective semiconductor In2S3 for artificial photonic nociceptor

Abstract: To develop an advanced artificial intelligent optoelectronic information system, to accurately simulate the photonic nociceptors, like the process of activation of a human visual nociceptive pathway, is of great significance. The visible light reaches the retina for human visual perception, but its excessive exposure can cause tissue damage. However, there are relatively few reports on visible light-triggered nociceptors. Here, we introduce a two-dimensional natural defective III-VI semiconductor β-In2S3 and u… Show more

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Cited by 11 publications
(5 citation statements)
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“…2D materials are now attracting scientists due to their outstanding properties, such as a large surface area, which enables them to be remarkably sensitive to photon signals, tunable bandgap, and easy synthesis at low cost. 15–17 In 2019, a black phosphorus (BP)-based photodetector fabricated by a group of Li Huang exhibited a high responsivity with a value of 23 A W −1 under 368 nm illumination. 18 Moreover, while devices based on hexagonal boron nitride (h-BN) can detect deep UV light at 210 nm with an extremely low excitation power density, 19 one fabricated from molybdenum disulfite (MoS 2 ) provided sensitivity to a large band from 445 to 2717 nm with the maximum values of R = 50.7 mA W −1 and D = 1.55 × 10 9 Jones.…”
Section: Introductionmentioning
confidence: 99%
“…2D materials are now attracting scientists due to their outstanding properties, such as a large surface area, which enables them to be remarkably sensitive to photon signals, tunable bandgap, and easy synthesis at low cost. 15–17 In 2019, a black phosphorus (BP)-based photodetector fabricated by a group of Li Huang exhibited a high responsivity with a value of 23 A W −1 under 368 nm illumination. 18 Moreover, while devices based on hexagonal boron nitride (h-BN) can detect deep UV light at 210 nm with an extremely low excitation power density, 19 one fabricated from molybdenum disulfite (MoS 2 ) provided sensitivity to a large band from 445 to 2717 nm with the maximum values of R = 50.7 mA W −1 and D = 1.55 × 10 9 Jones.…”
Section: Introductionmentioning
confidence: 99%
“…Metal chalcogenide (MC) semiconductors have garnered unprecedented recognition in the past few decades and have been explored widely in order to complement graphene due to their promising optoelectronic properties. [1][2][3][4] These materials, both in nano dimensions and in a thin film geometry, are considered quite exquisite due to their appealing electronic, physical and structural properties. 5,6 In this regard, ternary MCs are of particular interest as they blend the extraordinary properties of MCs with the benefit of physical and chemical property tunability, along with solution processability.…”
Section: Introductionmentioning
confidence: 99%
“…Ultrasensitive photodetectors have attracted great research interest in optical memory, photonic nociceptor, imagery and biosensing [1][2][3][4][5][6][7][8]. However, state-of-the-art commercial photodetectors, such as HgCdTe, quantum-well and quantum-dots (QDs) structures, suffer from complex manufacturing processes, high-cost and low working temperature [9].…”
Section: Introductionmentioning
confidence: 99%