Intrinsically flexible all-carbon-nanotube electronics enabled by a hybrid organic–inorganic gate dielectric

Abstract

The advancement of Internet of Things has stimulated huge demands on low-voltage flexible electronics. Carbon-nanotube (CNT)-based electronics are of great promise to this end for their intrinsic flexibility, high carrier mobility, and capability to synthesize as semiconducting or metallic to serve as the channels, electrodes, and interconnects of circuits. However, the gate dielectric often has to adopt brittle oxides, which can seriously limit the device flexibility. Herein, we show that a hybrid polyimide-Al2O3 material can serve as a good gate dielectric to realize truly intrinsic flexibility of transistors and circuits based on CNTs. With this hybrid dielectric, high-performance all-CNT transistors and integrated circuits of inverters, ring oscillators, and logic gates are demonstrated. Particularly, the inverters exhibit a remarkably high gain of 342.5 and can be used as an analog amplifier for millivolt small signals. Ultralow voltage (50 mV) operation is also feasible, which highlights the great promise for low-power applications.

A Universal Method for Extracting and Quantitatively Analyzing Bias‐Dependent Contact Resistance in Carbon‐Nanotube Thin‐Film Transistors

“…The detailed fabrication process of the device can be seen in experimental section and reference. [34] The electrical measurements of ACNT-TFTs were performed using an Agilent B1500A semiconductor analyzer at room temperature and one standard atmospheric pressure (1 atm). As shown in Figure 1c,d, the transistors exhibit typical p-type conductivity with a high on-off ratio (>10 4 ).…”

Ultraflexible Monolithic Three-Dimensional Static Random Access Memory

“…To reduce the area, monolithic three-dimensional (M3D) device-level integration is an effective method that vertically stacks n- and p-type devices. − However, the existing interlayer vias in typical M3D architectures, as the vertical electrical connection between different layers, in turn reduce the SRAM flexibility. , Moreover, an intrinsically flexible dielectric is also necessary for SRAM to remain stable against severe deformation. We previously introduced a hybrid polyimide (PI) and Al 2 O 3 to design planar circuits based on CNT transistors, which is considered as a significant contributor to the design of a highly flexible circuit …”

“…We previously introduced a hybrid polyimide (PI) and Al 2 O 3 to design planar circuits based on CNT transistors, which is considered as a significant contributor to the design of a highly flexible circuit. 22 On the other hand, the fabrication process of flexible CNT and a-IGZO electronics is carried out at low temperature (less than 180 °C). 23,24 The benefit of low-temperature processes for this integration should not obscure the importance of thermal stability.…”

Enhanced Mechanical Strength of Metal Ion-Doped MXene-Based Double-Network Hydrogels for Highly Sensitive and Durable Flexible Sensors

“…Flexible sensors are widely used in electronic skin and human–computer interaction − because of their unique advantages such as lightweight, portability, flexibility, foldability, and adaptability. − However, traditional flexible sensors are made by physically incorporating metals with conductive functions inside a rigid, dry, and flexible substrate. − In contrast, conductive hydrogel with properties similar to biological tissues integrates conductive and substrate materials into one to achieve the sensing function and has become a popular material in the field of flexible electronics. − However, it remains challenging to combine excellent mechanical properties and strong electrical conductivity with fast and sensitive sensing. − This is due to the balance between increased conductivity and decreased flexibility and deformability in conductive hydrogel composites. , …”