2022
DOI: 10.1109/access.2022.3209148
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Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

Abstract: The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data is encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing methods. The encoded resistance states are randomized to maximize the entropy of the ReRAM resistance distribution, thus providing robustness to reverse engineering (RE) attacks. Simulations of data encryption and decryption using experimental data from Ru(BE)/… Show more

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Cited by 3 publications
(1 citation statement)
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“…This concept extends to the integration of energy harvesters with varying voltage profiles, ranging from 0.5 V to over 3 V. Figure 3c illustrates a 3D stacked arrangement of multiple batteries using advanced packaging technologies. [ 47 ] Each battery can serve different functions or collectively meet a large energy demand. Although this design appears promising, practical demonstrations are yet to be realized, demanding research beyond Level 0 that shifts focus to packaging, integration, and functional aspects in an integrated form.…”
Section: Introductionmentioning
confidence: 99%
“…This concept extends to the integration of energy harvesters with varying voltage profiles, ranging from 0.5 V to over 3 V. Figure 3c illustrates a 3D stacked arrangement of multiple batteries using advanced packaging technologies. [ 47 ] Each battery can serve different functions or collectively meet a large energy demand. Although this design appears promising, practical demonstrations are yet to be realized, demanding research beyond Level 0 that shifts focus to packaging, integration, and functional aspects in an integrated form.…”
Section: Introductionmentioning
confidence: 99%