2023
DOI: 10.1002/adfm.202305252
|View full text |Cite
|
Sign up to set email alerts
|

Intrinsically Stretchable Subthreshold Organic Transistors for Highly Sensitive Low‐Power Skin‐Like Active‐Matrix Temperature Sensors

Jun Su Kim,
Min Woo Jeong,
Tae Uk Nam
et al.

Abstract: Stretchable wearable sensors ultimately require low power consumption and high response to physiological signals with skin conformability. However, power‐response tradeoff and strain‐dependent sensing instability remain key challenges for electronic skin (e‐skin) sensors. Herein,an intrinsically stretchable organic subthreshold transistor operating at low voltage (−1 V) is presented, leading to ultralow power consumption (<1 nW) for highly sensitive skin‐like temperature sensory devices. The highly temperat… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0
1

Year Published

2024
2024
2024
2024

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 10 publications
(2 citation statements)
references
References 50 publications
0
1
0
1
Order By: Relevance
“…The memory on/off ratio and memory window of the devices remained virtually unchanged under all of the investigated ambient conditions. In addition, the device exhibited reliable memory performance by maintaining a memory on/off ratio greater than 10 4 and a memory window greater than 10 V, with no alteration in the activation energy for writing, 38 across the entire temperature range from −30 to 60 °C, which represents the temperature fluctuations of all four seasons (Figures 4c, S33, and S34). The drift in the temperature test is attributed to thermally activated hopping within a Gaussian distribution of localized states in semicrystalline or disordered polymer semiconductors.…”
Section: Resultsmentioning
confidence: 98%
“…The memory on/off ratio and memory window of the devices remained virtually unchanged under all of the investigated ambient conditions. In addition, the device exhibited reliable memory performance by maintaining a memory on/off ratio greater than 10 4 and a memory window greater than 10 V, with no alteration in the activation energy for writing, 38 across the entire temperature range from −30 to 60 °C, which represents the temperature fluctuations of all four seasons (Figures 4c, S33, and S34). The drift in the temperature test is attributed to thermally activated hopping within a Gaussian distribution of localized states in semicrystalline or disordered polymer semiconductors.…”
Section: Resultsmentioning
confidence: 98%
“…(a) 基于复合有机半导体结构的有机晶体管器件结构图. (b, c) DPPT-TT:SEBS薄膜表面 形貌图和基于该混合薄膜的OFET随温度变化的电流信号[48] . (d) 基于绝缘层设计发展的有机晶体管器件结构图.…”
unclassified