Flexible and tunable bulk acoustic wave (BAW) resonators are propitious for technical breakthroughs in flexible microelectromechanical systems, next-generation wireless telecommunication devices, and wearable magnetic field sensors. Here, we report a highly flexible and multifaceted film BAW resonator comprising piezoelectric PMN−PT thin film sandwiched between magnetostrictive Ni−Mn−In electrodes and grown on flexible Ni foil. The fundamental resonance frequency (f R ) obtained at 5.31 GHz is tunable with both magnetic and electric fields. A considerable upshift in f R ∼ 450 MHz and sensitivity of ∼3.75 Hz/nT is attained with 1200 Oe DC magnetic field. This shift in f R is attributed to the strain-mediated magnetoelectric coupling in the fabricated resonator. A noteworthy tunability of 9.6% is obtained with a magnetic field. However, an appreciable down-shift of ∼360 MHz in f R is attained with 10 V DC bias. The electric field sensitivity and tunability are obtained as ∼36 Hz/μV and 6.8%, respectively. Additionally, the experimental resonance frequency curves are fitted with an equivalent modified Butterworth−Van Dyke model. The impact of magnetic field and DC bias voltage on resonator parameters, i.e., quality factor, coupling coefficient, figure of merit, and acoustic velocity, is thoroughly investigated. The flexible BAW resonator shows no apparent change in f R up to 3000 bending cycles. The proposed flexible and tunable thin film BAW resonator is promising for futuristic flexible multifunctional MEMS, tunable resonators, and magnetic field sensors.