Intrinsically Tunable Laminated Ferroelectric Scandium Aluminum Nitride Extensional Resonator Based on Local Polarization Switching

Dabas, Shaurva; Mo, Dicheng; Rassay, Sushant; Tabrizian, Roozbeh

doi:10.1109/mems51670.2022.9699790

Cited by 12 publications

(5 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Empirically, adjusting E c can be effectively achieved by altering the thickness of the thin film. So, we have summarized recent research on the thickness of AlScN films [ 23 , 34 , 36 , 43 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 , 64 , 65 , 66 , 67 , 68 ], as depicted in Figure 1 c. Such research of thickness reveals a significant downward trend, while the corresponding Sc components gradually concentrate around 0.3. In 2023, it appears to represent a new milestone, with thickness even dropping below 5 nm.…”

Section: Materials Properties and Preparation Processesmentioning

confidence: 99%

“…Copyright 2021, AIP Publishing. ( c ) Research trends in AlScN film thickness in recent years [ 23 , 34 , 36 , 43 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 , 64 , 65 , 66 , 67 , 68 ]. ( d ) The cross-sectional TEM image of Al/AlScN/Al and interfaces between layers [ 69 ].…”

Section: Figurementioning

confidence: 99%

See 1 more Smart Citation

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Qin,

He,

Han

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique polarization properties and diverse manufacturing techniques. On the occasion of the 100th anniversary of the birth of ferroelectricity, scandium-doped aluminum nitride, which is a different wurtzite structure, was reported to be ferroelectric with a larger coercive, remanent polarization, curie temperature, and a more stable ferroelectric phase. The inherent advantages have attracted widespread attention, promising better performance when used as data storage materials and better meeting the needs of the development of the information age. In this paper, we start from the characteristics and development history of ferroelectric materials, mainly focusing on the characteristics, preparation, and applications in memory devices of ferroelectric wurtzite AlScN. It compares and analyzes the unique advantages of AlScN-based memory devices, aiming to lay a theoretical foundation for the development of advanced memory devices in the future.

show abstract

Section: Materials Properties and Preparation Processesmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Qin,

He,

Han

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…This facilitates the creation of radio-frequency (RF) filters with significantly lower loss and higher bandwidth compared to AlN counterparts [ 2 , 3 , 4 , 5 ]. Besides the

enhancement, the recent discovery of ferroelectricity in Sc x Al 1−x N [ 6 ] has initiated extensive research efforts for the creation of configurable RF components, such as varactors, and tunable and switchable resonators and filters [ 7 , 8 , 9 , 10 , 11 , 12 ]. These components are of particular interest for emerging wireless communication systems that require multi-band adaptive operation over a wide frequency spectrum [ 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Dual-Mode Scandium-Aluminum Nitride Lamb-Wave Resonators Using Reconfigurable Periodic Poling

Rassay

Tabrizian

2022

Micromachines

Self Cite

View full text Add to dashboard Cite

This paper presents the use of ferroelectric behavior in scandium–aluminum nitride (ScxAl1−xN) to create dual-mode Lamb-wave resonators for the realization of intrinsically configurable radio-frequency front-end systems. An integrated array of intrinsically switchable dual-mode Lamb-wave resonators with frequencies covering the 0.45–3 GHz spectrum. The resonators are created in ferroelectric scandium–aluminum nitride (Sc0.28Al0.72N) film and rely on period poling for intrinsic configuration between Lamb modes with highly different wavelengths and frequencies. A comprehensive analytical model is presented, formulating intrinsically switchable dual-mode operation and providing closed-form derivation of electromechanical coupling (kt2) in the two resonance modes as a function of electrode dimensions and scandium content. Fabricated resonator prototypes show kt2s as high as 4.95%, when operating in the first modes over 0.45–1.6 GHz, 2.23% when operating in the second mode of operation over 0.8–3 GHz, and series quality factors (Qs) over 300–800. Benefiting from lithographical frequency tailorability and intrinsic switchability that alleviate the need for external multiplexers, and large kt2 and Q, dual-mode Sc0.28Al0.72N Lamb-wave resonators are promising candidates to realize single-chip multi-band reconfigurable spectral processors for radio-frequency front-ends of modern wireless systems.

show abstract

“…Despite these challenges, a new wave of intrinsically switchable ScxAl1-xN BAW and Lamb wave resonators are recently demonstrated, based on tuning polarization through application of low-frequency pulses [7][8][9][10][11][12]. In these approaches, switching pulses with slightly lower voltage than coercive is applied, to enable "transducer depolarization" through reversing c-axis in a fraction of ferroelectric domains and reducing the net electromechanical coupling by charge cancellation.…”

Section: Introductionmentioning

confidence: 99%

A SC0.28AL0.72N Laminated Bulk Acoustic Wave Resonator With Self-Oven-Controlled Switchability

Dabas,

Mo,

Rassay

et al. 2022

2022 Solid-State, Actuators, and Microsystems Workshop Technical Digest

View full text Add to dashboard Cite

This abstract reports an intrinsically switchable 7.01 GHz thickness-extensional bulk acoustic wave (BAW) scandiumaluminum nitride (Sc0.28Al0.72N) resonator with a reduced switching voltage using self-ovenization. The resonator is created from alternative stacking of two Sc0.28Al0.72N layers with three electrode layers, enabling tailorability of transducer polarization across the thickness and based on ferroelectricity. Upon aligning the polarization of the two Sc0.28Al0.72N layers in the same or opposite directions, the electromechanical coupling of the thicknessextensional mode is maximized or nulled, resulting in operation of the resonator in On and Off states, respectively. Besides, the switching voltage is significantly reduced by self-ovenization of the resonator through a DC-biased serpentine-shaped top electrode and due to the temperature-dependent reduction in Sc0.28Al0.72N coercive field. A prototype is demonstrated at 7.01 GHz with a 𝑘 𝑡 2 of 6.95% and a loaded Q of 72.2. The intrinsic switchability is successfully demonstrated with and without self-ovenization, using 25kHz triangular pulses with 80.6V and 63.6V amplitude, respectively. The presented results highlight the potential of self-ovenization to reduce the large switching voltage of Sc0.28Al0.72N resonators and filters for configurable RF front-end applications.

show abstract

Intrinsically Tunable Laminated Ferroelectric Scandium Aluminum Nitride Extensional Resonator Based on Local Polarization Switching

Cited by 12 publications

References 10 publications

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Dual-Mode Scandium-Aluminum Nitride Lamb-Wave Resonators Using Reconfigurable Periodic Poling

A SC0.28AL0.72N Laminated Bulk Acoustic Wave Resonator With Self-Oven-Controlled Switchability

Contact Info

Product

Resources

About