SnTe, as tructural analogue of champion thermoelectric (TE) material PbTe, has recently attracted wide attention for TE energy conversion. Herein, we demonstrate ac o-doping strategy to improve the TE performance of SnTe via simultaneous modulation of electronic structure and phonon transport. The electrical transport is optimizedb y 3mol %A gd oping in self-compensated SnTe( i.e., Sn 1.03 Te). Further,Mgdoping in SnAg 0.03 Te resulted in highly converged valence bands,w hich enhanced the Seebeck coefficient markedly.T he energy gap between two uppermost valence bands (DE v )decreases to 0.10 eV in Sn 0.92 Ag 0.03 Mg 0.08 Te compared to 0.35 eV in pristine SnTe. The optimizedp-type carrier concentration and highly converged valence bands gave ahigh power factor of ca. 27 mWcm À1 K À2 at 865 Ki nS n 0.92 Ag 0.03 Mg 0.08 Te. The lattice thermal conductivity of Sn 0.92 Ag 0.03 Mg 0.08 Te reached to an ultra-low value of % 0.23 Wm À1 K À1 at 865 Kd ue to the formation of MgTen anoprecipitates in SnTem atrix. These combined effects resulted in ah igh TE figure of merit, zT % 1.55 at 865 Ki nSn 0.92 Ag 0.03 Mg 0.08 Te.