Introducing boron gallium nitride as carriers’ source layer for efficient near-ultraviolet microLED
Jamshad Bashir,
Muhammad Usman,
Nouredine Sengouga
et al.
Abstract:This study explored the impact of boron gallium nitride (BGaN) in buffer layer and hole source layer. We employed B0.05Ga0.95N which reduced the lattice mismatch as well as the electric field. BGaN not only minimized the number of electrons leaking out of quantum wells (QWs) but also improved the hole injection. It is evident from our simulations that internal quantum efficiency (IQE) is enhanced significantly as more carriers are available for radiative recombination in multiple quantum wells (MQWs). Along wi… Show more
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