Introduction

Shmartsev, Yu. V.; Valov, Yu. A.; Borshchevskii, A. S.

doi:10.1007/978-1-4899-4767-3_1

Refractory Semiconductor Materials 1966

DOI: 10.1007/978-1-4899-4767-3_1

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Introduction

Yu. V. Shmartsev¹,

Yu. A. Valov²,

A. S. Borshchevskii³

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1968

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“…The problems that beset crystal growth of GaP from stoichiometric melts have been reviewed by Miller (2) and Shmartsev (3). Generally, such crystal growing operations as pulling, Bridgman growth, or float zoning must be performed in high pressure autoclaves.…”

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Growth of Large Single Crystals of Gallium Phosphide from a Stoichiometric Melt

Blum¹,

Chicotka²

1968

J. Electrochem. Soc.

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A procedure is described for the growth of large single crystals of gallium phosphide. A vertical Bridgman apparatus is employed with a controlled phosphorus pressure source to maintain stoichiometric conditions during freezing. The high phosphorus pressure is contained by the use of heavy‐walled quartz in the low temperature zone, and by permitting the thin‐walled quartz in the hot zone to soften and expand out against a graphite support tube. Crystals doped with both zinc and tellurium have been prepared. The electrical properties of these and “undoped” crystals are presented.

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mentioning

confidence: 99%

Growth of Large Single Crystals of Gallium Phosphide from a Stoichiometric Melt

Blum¹,

Chicotka²

1968

J. Electrochem. Soc.

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show abstract

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Introduction

Cited by 1 publication

References 0 publications

Growth of Large Single Crystals of Gallium Phosphide from a Stoichiometric Melt

Growth of Large Single Crystals of Gallium Phosphide from a Stoichiometric Melt

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