Dry Etching for VLSI 1991
DOI: 10.1007/978-1-4899-2566-4_1
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“…B. Polymer Etching. Polymer film etching was performed at the Cornell Nanofabrication Facility (CNF) using a reactive ion etcher (RIE) by Applied Materials, Inc. An RIE combines both the physical sputtering of an ion mill and the chemically reactive nature of a plasma etcher. The parameters used in our etching process consisted of 10 cm 3 (STP)/min of CF 4 , a pressure of 2 mTorr, and a power of approximately 0.08 W/cm 2 .…”
Section: Methodsmentioning
confidence: 99%
“…B. Polymer Etching. Polymer film etching was performed at the Cornell Nanofabrication Facility (CNF) using a reactive ion etcher (RIE) by Applied Materials, Inc. An RIE combines both the physical sputtering of an ion mill and the chemically reactive nature of a plasma etcher. The parameters used in our etching process consisted of 10 cm 3 (STP)/min of CF 4 , a pressure of 2 mTorr, and a power of approximately 0.08 W/cm 2 .…”
Section: Methodsmentioning
confidence: 99%