The precise bonding and the electronic structure of the thermoelectric material Sn 1-x Ge x Te with two different doping levels viz., x = 0.12 and x = 0.25 have been determined using single crystal X-ray data and maximum entropy method (MEM). The thermal vibration parameters of the individual atoms in these two systems have also been studied and reported. The electron densities at the middle of the bond along [1 0 0] direction are found to be 0.346 e/Å 3 and 0.359 e/Å 3 for x = 0.12 and 0.25, respectively, showing different strengths of the bonding.