Introduction

Álvarez, Daniel Montero

doi:10.1007/978-3-030-63826-9_1

Cited by 2 publications

(2 citation statements)

References 44 publications

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“…In recent years, supersaturated Si has been the object of numerous studies due to the interesting properties of this family of materials for photovoltaics [1] and infrared (IR) detector fields [2,3]. In particular, Si-based IR detector technology can be used in a great number of applications in both the military * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

Olea¹,

González-Dı́az²,

Pastor³

et al. 2022

Semicond. Sci. Technol.

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In the scope of supersaturated semiconductors for infrared detectors, we implanted Si samples with Ti at high doses and processed them by Rapid Thermal Annealing (RTA) to recover the crystal quality. Also, for comparative purposes, some samples were processed by Pulsed-Laser Melting (PLM). We measured the electronic transport properties at variable temperature and analysed the results. Results indicate that for RTA samples the surface layer with a high Ti concentration has a negligible conductivity due to defects. On the contrary, the implantation tail region, which has a measurable conductivity due to a very high electron mobility. This region shows the activation of a very shallow donor and of a deep donor level. While the deep level has been previously reported for Ti in Si, such a shallow level has never been measured, and we suggest that it originates from Ti-Si complexes. Finally, a decoupling effect between the implanted layer and the substrate seems to be present, and a bilayer model is applied to fit the measured properties. The fitted parameters follow the Meyer-Neldel rule. The role of the implantation tails in Si supersaturated with Ti is revealed in this work.

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Section: Introductionmentioning

confidence: 99%

Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

Olea¹,

González-Dı́az²,

Pastor³

et al. 2022

Semicond. Sci. Technol.

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“…Sub-bandgap response at room temperature has already been demonstrated in Si using Ti as deep centers [27], in concentrations high enough to induce the formation of a supersaturated Si layer, extending Si responsivity up to 2.5 µm wavelength at room temperature [28,29]. This work describes the use of two non-invasive, fast and reliable techniques, as Time-Resolved Reflectometry (TRR) and Haze measurements, to study the effect of different laser annealing energy densities on the recrystallization process of Ti supersaturated Si layers.…”

Section: Introductionmentioning

confidence: 99%

Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements

Montero¹,

Caudevilla²,

Algaidy³

et al. 2023

Semicond. Sci. Technol.

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Hyperdoped or supersaturated semiconductors are gathering the attention of industry and research institutions due to their sub-bandgap photon absorption properties. In this study, two fast and non-invasive techniques, Time-Resolved Reflectometry (TRR) and Haze Measurements, are applied to infer the melt and solidification regimes of Ti supersaturated 300 mm silicon wafers, aiming to ease the characterization process towards high volume manufacturing of supersaturated materials. Ti supersaturation is attained by using an ion implantation process with a dose 3x1015 cm-2, which amorphizes the surface. Crystalline quality is then recovered by means of a XeCl UV Nanosecond Laser Annealing (NLA) process. TRR technique is used to determine two different melting and solidification processes of the laser annealed implanted surface. A first brief, low temperature peak (α peak) is associated with the melting process of the amorphized surface, followed by a longer peak/plateau (β1 peak/plateau), linked to the melting process of the crystalline phase below the amorphized layer, at sufficiently high laser fluences. Haze technique is used to indirectly measure the crystalline quality after the solidification process of the laser-annealed surface. Atomic Force Microscopy (AFM) measurements are used to obtain the surface roughness value and cross-section HRTEM micrographs to check crystalline quality.

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Introduction

Cited by 2 publications

References 44 publications

Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements

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