Introduction

Jiménez, J.; Tomm, Jens W.

doi:10.1007/978-3-319-42349-4_1

Cited by 1 publication

(1 citation statement)

References 91 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the change in the electrical conductivity and the Seebeck coefficient can be influenced by the increase in carrier concentration. The carrier concentration is closely related to the band gap energy, and its relation is given below [38]. ni=CT3/2exp(−Eg2KBT) where n i , C , T , k B , and E g are the carrier concentration, a constant, the absolute temperature, the Boltzmann constant, and the band gap energy, respectively.…”

Section: Resultsmentioning

confidence: 99%

Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

et al. 2019

View full text Add to dashboard Cite

SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal. It is highly desirable to improve the properties of polycrystalline SnSe whose TE properties are still not near to that of single crystal SnSe. In this study, in order to control the TE properties of polycrystalline SnSe, polycrystalline SnSe–SnTe solid solutions were fabricated, and the effect of the solid solution on the electrical transport and TE properties was investigated. The SnSe1−xTex samples were fabricated using mechanical alloying and spark plasma sintering. X-ray diffraction (XRD) analyses revealed that the solubility limit of Te in SnSe1−xTex is somewhere between x = 0.3 and 0.5. With increasing Te content, the electrical conductivity was increased due to the increase of carrier concentration, while the lattice thermal conductivity was suppressed by the increased amount of phonon scattering. The change of carrier concentration and electrical conductivity is explained using the measured band gap energy and the calculated band structure. The change of thermal conductivity is explained using the change of lattice thermal conductivity from the increased amount of phonon scattering at the point defect sites. A ZT of ~0.78 was obtained at 823 K from SnSe0.7Te0.3, which is an ~11% improvement compared to that of SnSe.

show abstract