Introduction of the MC3-II/GP system, medium current ion implanter with enhanced multi-charge beam current

Koike, Masazumi; Sato, Fumiaki; Sano, Makoto; Kawatsu, Sho; Kariya, Hiroyuki; Kimura, Yoshiki; Kudo, Tetsuya; Shiraishi, Miyuki; Shinozuka, Masamitsu; Takahashi, Yuji; Ishida, Yasuko; Tsukihara, Mitsukuni; Ueno, Kazuyoshi; Sugitani, M.

doi:10.1063/1.4766557

Cited by 6 publications

(1 citation statement)

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“…One is the eighteen-stage RF linear accelerator from the previous UHE [1], a multi-wafer ultra-high energy implanter, offering maximum beam energy of 2 MeV per charge. The other is the field proven end station used by the MC3-II/GP [5], a singlewafer medium current implanter, which can provide a throughput of 450 wafers/hour or more. The basic design and system performance of the S-UHE are described in the following sections.…”

Section: Introductionmentioning

confidence: 99%

Introduction of the S-UHE, a single-wafer ultra-high energy ion implanter

Watanabe¹,

Sasaki²,

Kabasawa³

et al. 2014

2014 20th International Conference on Ion Implantation Technology (IIT)

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In order to address the process requirements of leading-edge image sensors, a new single-wafer ultra-high energy ion implanter, the S-UHE, has been developed. This product incorporates two exceptional subassemblies. One is the eighteenstage RF linear accelerator from the UHE, a multi-wafer ultrahigh energy implanter, offering maximum beam energy of 2MeV per charge. The other is the field proven end station used by the MC3-II/GP, a single-wafer medium current implanter, which can provide throughput of over 450 wafers/hour. The S-UHE has a unique beam line concept where beam energy analyzing magnets bend the accelerated beam 180°. This system minimizes tool footprint, providing additional space for maintenance. Other key elements of the beam line include an electrostatic scanner, parallelizing lens and energy filter. The electrostatic scanner provides higher scan speed than mechanical systemssignificantly improving dose uniformity compared to a batch high energy implanter.Additionally, the S-UHE ensures accurate implant angles and ultra-low level of metal contamination, both of which are very important parameters for advanced image sensors.

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Section: Introductionmentioning

confidence: 99%