Introduction of the MC3-II∕WR System, an Extended Energy Medium Current Ion Implanter

Sugitani, M.; Sato, Fumiaki; Koike, Masazumi; Sano, Makoto; Ueno, Kazuyoshi

doi:10.1063/1.3033610

Cited by 5 publications

(3 citation statements)

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“…In order to explain a typical ion implanter’s structure, top view and side view block diagrams for medium-current machine, NV-MC3-II of SMIT (Sumitomo Heavy Industries Ion Technology Co., Ltd., Tokyo, Japan), are shown in Figure 2 [ 14 ]. Ions are generated from a gas or solid source material at the ion source arc block.…”

Section: Basics Of Ion Implantation Technologymentioning

confidence: 99%

“…Figure 4 is a dark current histogram of a virtual phase CCD (Charge-Coupled Devices), which has rather many blemishes [ 14 ]. It has two series of specific and periodic peaks, labeled as “a” and “b”.…”

Section: Metal Contaminationmentioning

confidence: 99%

“… The top view and side view block diagrams of a medium current ion implanter, NV-MC3-II, of SMIT [ 14 ]. …”

Section: Figurementioning

confidence: 99%

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A Review of Ion Implantation Technology for Image Sensors †

Teranishi

Fuse

Sugitani

2018

Sensors

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Ion implantation technology is reviewed mainly from the viewpoint of image sensors, which play a significant role in implantation technology development. Image sensors are so sensitive to metal contamination that they can detect even one metal atom per pixel. To reduce the metal contamination, the plasma shower using RF (radio frequency) plasma generation is a representative example. The electrostatic angular energy filter after the mass analyzing magnet is a highly effective method to remove energetic metal contamination. The protection layer on the silicon is needed to protect the silicon wafer against the physisorbed metals. The thickness of the protection layer should be determined by considering the knock-on depth. The damage by ion implantation also causes blemishes. It becomes larger in the following conditions if the other conditions are the same; a. higher energy; b. larger dose; c. smaller beam size (higher beam current density); d. longer ion beam irradiation time; e. larger ion mass. To reduce channeling, the most effective method is to choose proper tilt and twist angles. For P+ pinning layer formation, the low-energy B+ implantation method might have less metal contamination and damage, compared with the BF2+ method.

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Section: Basics Of Ion Implantation Technologymentioning

confidence: 99%

Section: Metal Contaminationmentioning

confidence: 99%