Zinc Oxide Based Nano Materials and Devices 2019
DOI: 10.5772/intechopen.85969
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Introductory Chapter: Overview of ZnO Based Nano Materials and Devices

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Cited by 3 publications
(2 citation statements)
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References 65 publications
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“…This contribution highly depends on the properties of the semiconductor. Some other semiconductors, such as TiO 2 , 37 ZnO, 38 WO 3− x , 39 etc. , were reported to exhibit metal-like LSPR, allowing them to enhance the Raman signal in both EM and CM.…”
Section: Resultsmentioning
confidence: 99%
“…This contribution highly depends on the properties of the semiconductor. Some other semiconductors, such as TiO 2 , 37 ZnO, 38 WO 3− x , 39 etc. , were reported to exhibit metal-like LSPR, allowing them to enhance the Raman signal in both EM and CM.…”
Section: Resultsmentioning
confidence: 99%
“…ZnO has a wide band gap of 3.37 eV and high binding energy of 60 meV at room temperature [2]. Also, ZnO has some other interesting properties such as high exciton binding energy, thermal stability, environmental compatibility, high mechanical and optical gain, and radiation hardness [3]. These properties made ZnO a leading material for several electronic and optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%