Inverse Tunnel Magnetoresistance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>Co</mml:mi><mml:mi>/</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi>SrTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mi>/</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi>La</mml:mi></mml:mrow><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>Sr</mml:mi></mml:mrow><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow

Teresa, J. M. De; Barthélémy, A.; Fert, A.; Contour, J. P.; Lyonnet, R.; Montaigne, F.; Sénéor, Pierre; Vaurés, A.

doi:10.1103/physrevlett.82.4288

Cited by 359 publications

(182 citation statements)

References 27 publications

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“…For Co and Ni which are known to have a Fermi energy density of states that is overwhelmingly minority, it is the majority electrons that are observed to carry the tunneling current in these experiments. Another indication that the TMR depends not just on the barrier but also on the electrodes is that the sign of the TMR has been observed to change when the barrier is changed using the same electrode materials [18]. The Julliere formula is most appropriate when comparing TMR for systems with different electrode materials but identical barriers.…”

Section: Julliere Modelmentioning

confidence: 99%

Tunneling magnetoresistance from a symmetry filtering effect

Butler

2008

Science and Technology of Advanced Materials

138

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Section: Julliere Modelmentioning

confidence: 99%

Tunneling magnetoresistance from a symmetry filtering effect

Butler

2008

Science and Technology of Advanced Materials

138

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“…7 This effect was put forward to explain positive and negative values of tunneling magnetoresistance depending on the applied voltage in MTJ's with Ta 2 O 5 and Ta 2 O 5 /Al 2 O 3 barriers 8 and to elucidate the inversion of the SP in Co/SrTiO 3 / La 0.67 Sr 0.33 MnO 3 MTJ's. 9 So far there are no theoretical studies explaining the microscopic origin of this phenomenon.…”

Section: Introductionmentioning

confidence: 99%

Effect of interface bonding on spin-dependent tunneling from the oxidized Co surface

et al. 2004

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We demonstrate that the factorization of the tunneling transmission into the product of two surface transmission functions and a vacuum decay factor allows one to generalize Jullière's formula and explain the meaning of the ''tunneling density of states'' in some limiting cases. Using this factorization we calculate spin-dependent tunneling from clean and oxidized fcc Co surfaces through vacuum into Al using the principallayer Green's-function approach. We demonstrate that a monolayer of oxygen on the Co͑111͒ surface creates a spin-filter effect due to the Co-O bonding which produces an additional tunneling barrier in the minority-spin channel. This changes the minority-spin dominated conductance for the clean Co surface into a majority-spin dominated conductance for the oxidized Co surface.

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“…This was already apparent in the work of Meservey and Tedrow cited above 1 since the experiments always showed a positive sign for the spin polarization, even in the cases of, e.g., Co and Ni where a negative sign was expected. Recently, this was explained by demonstrating that the choice of barrier material can strongly influence and even reverse the spin polarization of the tunneling current, 5 with obvious consequences for the interpretation of the injection experiments. It may be advantageous to also contemplate an (F or N)/I/F/S configuration; in this case the barrier is only used to increase the energy of the electrons coming from an N or F contact, while the polarization now takes place in a thin F layer between barrier and superconductor.…”

Section: Introductionmentioning

confidence: 99%

Depairing currents in the superconductor/ferromagnet proximity system Nb/Fe

et al. 2001

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We have investigated the behavior of the depairing current J dp in ferromagnet/superconductor/ferromagnet (F/S/F) trilayers as function of the thickness d s of the superconducting layers. Theoretically, J dp depends on the superconducting order parameter or the pair-density function, which is not homogeneous across the film due to the proximity effect. We use a proximity-effect model with two parameters ͑proximity strength and interface transparency͒, which can also describe the dependence of the superconducting transition temperature T c on d s . We compare the computations with the experimentally determined zero-field critical current J c0 of small strips ͑typically 5-m wide͒ of Fe/Nb/Fe trilayers with varying thickness d Nb of the Nb layer. Near T c the temperature dependence J c0 (T) is in good agreement with the expected behavior, which allows extrapolation to Tϭ0. Both the absolute values of J c0 (0) and the dependence on d Nb agree with the expectations for the depairing current. We conclude that J dp is correctly determined, notwithstanding the fact that the strip width is larger than both the superconducting penetration depth and the superconducting coherence length, and that J dp (d s ) is correctly described by the model.

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Inverse Tunnel Magnetoresistance inCo/SrTiO3/La0.7Sr0.3

Cited by 359 publications

References 27 publications

Tunneling magnetoresistance from a symmetry filtering effect

Tunneling magnetoresistance from a symmetry filtering effect

Effect of interface bonding on spin-dependent tunneling from the oxidized Co surface

Depairing currents in the superconductor/ferromagnet proximity system Nb/Fe

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