1986
DOI: 10.1070/qe1986v016n12abeh008536
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Inversion and stimulated emission as a result of a transition in NeIatλ=585.3 nm excited by discharges with a hard component

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Cited by 4 publications
(2 citation statements)
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“…A high degree of ionization followed by recombination is obtained due to the beam component of non-Maxwellian electrons with energies of 1-2 keV in the tail of the electron energy distribution function. Lasing on the NeI 585.3 nm line with a peak output power of several watts and a gain of several m −1 has been obtained [9,[13][14][15].…”
Section: Introductionmentioning
confidence: 97%
“…A high degree of ionization followed by recombination is obtained due to the beam component of non-Maxwellian electrons with energies of 1-2 keV in the tail of the electron energy distribution function. Lasing on the NeI 585.3 nm line with a peak output power of several watts and a gain of several m −1 has been obtained [9,[13][14][15].…”
Section: Introductionmentioning
confidence: 97%
“…Despite to the low efficiency they are very interesting from the point of view of the collision population mechanisms for a various electronic levels of rare gas atoms and inversion population producing on some transitions. One can emphasize some papers [9][10][11][12] in which the H 2 and NF 3 additives were used to increase the lasing efficiency on the rare gases transitions. These additives provide the depopulation of the lower laser level and as a consequence the increase of the power and duration of a lasing.…”
Section: Introductionmentioning
confidence: 99%