Inversion domains in AlGaN films grown on patterned sapphire substrate

Inversion domains and parallel growth in ammonothermally grown GaN crystals

“…Defects, such as inversion domains, occasionally occur in GaN crystals grown by various techniques; for example, they are known to occur in GaN films grown by Metallorganic Chemical Vapor Deposition (MOCVD) and Hydride Vapor Phase Epitaxy (HVPE) techniques [3][4][5][6] and it is not always obvious when they are present. However, there are few publications on defects in bulk GaN crystals.…”