“…Measuring Zeeman splitting (ZS) of hole states under an external magnetic field has been central in probing hole spin properties, as it is directly related to the hole g factor, which is itself strongly influenced by the underlying SOI, strain, symmetry, and confinement [24,25]. In III-V semiconductors [24,[26][27][28][29][30][31][32][33][34][35][36][37][38], hole spin splitting depends nonlinearly on the out-of-plane magnetic field strength B, causing Landau level crossings and anticrossings [28,39] and Zeeman crossings and anticrossings [12,40,41]. The nonlinearity is usually modeled by a quadratic-in-field contribution to ZS [24], which owes its existence to valence band mixing.…”