Photovoltaics for Space 2023
DOI: 10.1016/b978-0-12-823300-9.00013-3
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Inverted lattice-matched GaInP/GaAs/GaInNAsSb triple-junction solar cells

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“…PV cells belonging to the epitaxial family are usually multijunction cells based on GaAs and its derivatives [14][15][16]. Growth techniques suitable for epitaxy slow deposition rates (~0.1 Å/s) are Molecular Beam Epitaxy (MBE), Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD), including their variants, such as Plasma-Enhanced CVD (PECVD) and Metal-Organic CVD (MOCVD) [17].…”
mentioning
confidence: 99%
“…PV cells belonging to the epitaxial family are usually multijunction cells based on GaAs and its derivatives [14][15][16]. Growth techniques suitable for epitaxy slow deposition rates (~0.1 Å/s) are Molecular Beam Epitaxy (MBE), Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD), including their variants, such as Plasma-Enhanced CVD (PECVD) and Metal-Organic CVD (MOCVD) [17].…”
mentioning
confidence: 99%