Inverted Polymer Solar Cells Using Inkjet Printed ZnO as Electron Transport Layer: Characterization and Degradation Study

Abstract

In this work, stability and degradation of inverted organic solar cells (iOSCs) partially manufactured under air environment are analyzed. The degradation of iOSCs fabricated with inkjet printed ZnO and with spin coated PFN as electron transport layer (ETL) is compared. The PTB7 and PC 70 BM materials are used as donor and acceptor in the active layer, respectively, for all photovoltaic devices. During all the degradation study of the iOSCs, performance parameters such as open circuit voltage (V OC ), short circuit current density (J SC ), fill factor (FF) and Power conversion efficiency (PCE), are extracted from the current density -voltage measurements (J-V) under dark and light conditions. The PCE of the unencapsulated iOSCs with PFN as ETL, left under N 2 , decreased to 80% after 58 h, while the same PCE reduction for iOSCs with inkjet printed ZnO as ETL, occurred after 189 h. Under air environment, the PCE of unencapsulated iOSCs fabricated with ZnO as ETL devices decreases to 80% after 160 h.

All inkjet-printed organic solar cells on 3D objects

“…While inkjet printing of the charge extraction layers (ETL and HTL) as well as the top electrode was found to be relatively straightforward, the active layer (due to its morphological constraints) and the bottom electrode (due to shunt-causing agglomerates) pose a bigger challenge. Further optimizations and novel active layer materials such as non-fullerene acceptors helped to improve the PCE of inkjet-printed solar cells to 9%-16%, reaching 15.78% PCE as recently reported by Sang et al [2,[26][27][28][29][30][31][32][33][34][35].…”

Degradation analysis of inverted PM6 (PBDB-T-2F):Y7 (BTP-4CI) solar cells with PDINO and MoO3 as the ETL/HTL

“…32 The extracted parameters from the fitting of the selected J – V curves are shown in Table 2. As reported in our previous studies, 19,33,34 the ideality factor of the diode ( n ) represents the dominant transport mechanism in the device, where n = 1 (ideal diode) indicates that the diffusion mechanism is dominant in the device. However, a value of n = 2 indicates that recombination is the dominant mechanism, which is mainly caused by trap-assisted recombination.…”

Estudio sobre los parámetros de impresión para mejorar la inyección por goteo-sobre-demanda

“…En diferentes estudios se han implementado patrones impresos de materiales MOS en la estructura de algún dispositivo semiconductor de película delgada, como la capa activa en un TFT (Chung et al, 2008), en fotodetectores ultravioleta de alta sensibilidad (Nahlik et al, 2019) o como capa de transporte de electrones en celdas solares poliméricas invertidas (Sacramento et al, 2020). Todos estos coinciden en la importancia de caracterizar a detalle y comprender las condiciones que producen diferentes morfologías, espesores y uniformidad de los patrones impresos para optimizarlos en el desempeño de tales dispositivos.…”