A set of 130 nm thick indium sulfide films was deposited on soda-lime glass substrates at 150 • C by modulated flux deposition (MFD). Next, four different annealing conditions were carried out inside the MFD equipment, namely annealings with and without additional delivery of sulfur were investigated at two annealing temperatures, T A = 250 • C and T A = 350 • C. All the annealing conditions enhanced the crystallinity of the as-deposited indium sulfide films, which was considered as the main factor after the increase of the optical transmission, on the bandgap energy (E g ) and on the electrical conductivity. E g increased from 2.62 eV for the as-deposited films to 2.66 eV (T A = 250 • C) and 2.73 eV (T A = 350 • C). Regarding the electrical properties, a minimum resistivity of 4.8 cm was achieved by vacuum-annealing at 350 • C without the delivery of sulfur.