Investigating a <sc>MOSFET</sc> Driver (Buffer) Circuit Transition Ringings Using an Analytical Model

Abstract

In this paper, a new analytical model introduced extracting from datasheet of a MOSFET and developed a MATLAB code for simulating a MOSFET driver circuit is proposed in the literature to observe the ringings of its output for capacitively loaded case. The output waveform is studied only for high-to-low transition. Gate drive resistance, wiring parasitics of the printed circuit board layout, and the characteristic properties of the MOSFET affect both the delay time of the MOSFET to become ON and performance of the driver circuit. Also, voltage stress of the MOSFET and therefore safe operating range for the circuit all depend on these effects. These effects are all considered in the design stage. The simulation results obtained from CST Design Studio software are compared with the results of experimental work. The analytical modeling results solved in the MATLAB are found congruent with the simulation results and experimental results as well. The simulation work showed that developed MATLAB code along with extracted models from datasheets has less convergence problems and also requires less simulation time.Index Terms-CMOS buffer circuit, gate drive resistance, MOSFET modeling.

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

“…In a complicated resonance process, the impact of individual inductances (L d , L g , L s ) on the oscillation is different. Analytical (Xiao et al, 2004;Ren et al, 2006;Zhang et al, 2008;Li et al, 2011;Wang et al, 2012;Alexakis et al, 2013;Raee et al, 2013;Takao and Ohashi, 2013;Azizouglu and Karaca, 2014;Nayak and Hatua, 2016;Xie et al, 2016) and empirical methods (Chen, 2009;Chen et al, 2010;Zhang et al, 2012;Chen et al, 2013a;Stewart et al, 2013;Wada et al, 2013;Anthon et al, 2014;Noppakunkajorn et al, 2014;Noppakunkajorn et al, 2015;Walder and Yuan, 2015;Wang X. et al, 2017) have been reported that investigated the impact of different parasitic inductance on oscillation. As shown in Figure 3B, it is concluded that the impact of L g on damped oscillation is negligible and the main contributor is L d (Chen, 2009;Khanna et al, 2013).…”

Detection of reverse recovery characteristics of power diodes

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Transconductance Amplifier for Optical Metrology Applications of Light-Emitting Diodes

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