Investigating the effect of Zn doping on physical properties of nanostructured Sb2S3 thin films by dip-coating technique

Kalangestani, F. Chharganeh; Ghodsi, F. E.; Bazhan, Z.

doi:10.1007/s00339-020-03734-9

Cited by 15 publications

(5 citation statements)

References 35 publications

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“…Further, we emphasized that there are no scientific papers concerning doped Sb2S3 nanoparticles except for our results, and generally, for doped nanostructured Sb2S3 films photoluminescence measurements are rarely reported. We found that photoluminescence studies reported, for instance, for Zn-doped nanostructured Sb2S3 film [36] and reported emission peaks do not match our peaks, except for the peak at 715 nm (~1.7 eV) that we also observed in samples with larger and smaller non-doped and doped synthesized nanoparticles. The PL results confirming the possible quantum size effect should be highlighted here.…”

Section: Non-doped and Cu- Se- And Zn-doped Amorphous Sb2s3 Nanoparti...contrasting

confidence: 85%

“…Emission spectra of the non-doped Sb2S3 sample (Figure 12b) obtained using stationary excitation (xenon lamp) are represented as a wide band covering the visible range of the spectrum (from green to red) and relatively narrow peaks at 741 nm (1.7 eV), 613 nm (2.0 eV), 559 nm (2.2 eV) and 507 nm (2.4 eV). Broad emission bands for Sb2S3 nanoparticles, nanowires, and thin films were observed in some earlier works [81,82] and are presumably associated with intrinsic defects of the matrix. Embedding of Zn into the Sb2S3 host leads to significant suppression of the wide luminescence band related to intrinsic defects.…”

Section: Non-doped and Cu- Se- And Zn-doped Amorphous Sb2s3 Nanoparti...mentioning

confidence: 51%

“…Apparently, the doping process for larger amorphous nanoparticles causes changes in electronic properties, in particular, a decrease in the bandgap. For a better understanding, Figure 10 For instance, it has been observed that Zn-doping of Sb2S3 thin films causes bandgap reduction [36], the same trend observed in Figure 9 for Cu and Se-doped samples with larger nanoparticle sizes. In fact, the quantum size effect could be a real reason for not observing a difference in the bandgap values of the non-doped and doped Sb2S3 samples due to the fact that, generally, the bandgap energy is also affected by the composition of nanoparticle semiconductors.…”

Section: Drs Spectra Of Undoped Cu- Se- and Zn-doped Synthesized Amor...mentioning

confidence: 65%

“…Up to now, there have only been a few reports concerning Zn and Cu-doped Sb2S3, while Se-doped Sb2S3 is more prevalent [35][36][37][38][39][40][41]. It should be noted that all of those samples are doped in thin-film form and were obtained using different techniques.…”

Section: Introductionmentioning

confidence: 99%

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Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect

et al. 2023

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The modified hot-injection method was applied for the synthesis of amorphous non-doped and copper (Cu) and selenium (Se) doped antimony (III) sulfide (Sb2S3) nanoparticles with reduced sizes. Moreover, zinc (Zn) doped Sb2S3 nanoparticles were synthesized for the first time by the same approach. High-resolution transmission electron microscopy (HRTEM) and TEM of amorphous undoped and doped samples revealed small spherical nanoparticles of a few (1-4) nanometers aggregated into larger spherical clusters, while introducing different dopant ions into the Sb2S3 structure did neither influence the spherical morphology nor the sizes of samples. The presence of the basic elements (S and Sb) and dopants (Cu, Se, or Zn) was confirmed by EDX analysis and mapping. Additionally, field emission scanning electron microscopy (FE-SEM) was performed on the Zn-doped Sb2S3 sample, confirming spherical morphology as well as quantitative incorporation of Zn in the Sb2S3 lattice. X-ray powder diffraction (XRPD) results of the non-doped and doped samples revealed an amorphous structure. The crystalline Zn-doped Sb2S3 samples obtained by heating the amorphous ones revealed well-defined peaks from only the Sb2S3 phase, confirming a successful doping process. Diffuse reflectance spectroscopy (DRS) revealed high optical bandgap energies (2.03-2.12 eV) in comparison to the values (1.6-1.7 eV) obtained for large spherical non-doped and doped particles. It was demonstrated that there is not only a significant reduction in particle size compared to previously synthesized non-doped and doped amorphous nanoparticles of the same composition, but that there is also a significant increase in the bandgap values of 0.4-0.5 eV, which could be attributed to a quantum size effect. X-ray photoelectron spectroscopy (XPS) measurements revealed pure phase composition without any impurities for the undoped sample, and characteristic peaks for copper 2p, selenium, and zinc Auger peaks for the doped samples, respectively. The XPS valence band measurements were performed due to the weak Zn Auger peak, confirming a shift towards lower binding energy compared to the non-doped sample, demonstrating the doping of the observed sample.Photoluminescence (PL) measurements show that embedding Zn into the Sb2S3 host lattice suppresses the wide luminescence band with peaks at 1.7 eV, 2.0 eV, 2.2 eV, and 2.4 eV, which is related to intrinsic defects. Furthermore, the energy dependence of the light emission on the size of the synthesized nanoparticles suggests that the quantum confinement effect causes the light emission.

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Section: Non-doped and Cu- Se- And Zn-doped Amorphous Sb2s3 Nanoparti...contrasting

confidence: 85%

Section: Non-doped and Cu- Se- And Zn-doped Amorphous Sb2s3 Nanoparti...mentioning

confidence: 51%

Section: Drs Spectra Of Undoped Cu- Se- and Zn-doped Synthesized Amor...mentioning

confidence: 65%

Section: Introductionmentioning

confidence: 99%

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Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect

et al. 2023

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Section: Non-doped and Cu- Se- And Zn-doped Amorphous Sb2s3 Nanoparti...mentioning

confidence: 51%

Amorphous non-doped and Se, Cu, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: Bandgap tuning and possible observation of the quantum size effect

Validžić

Popović

Potočnik

et al. 2022

Preprint

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The modified hot-injection method was applied for the synthesis of amorphous non-doped and copper (Cu) and selenium (Se) doped antimony (III) sulfide (Sb2S3) nanoparticles with reduced sizes. Moreover, zinc (Zn) doped Sb2S3 nanoparticles were synthesized for the first time by the same approach. High-resolution transmission electron microscopy (HRTEM) and TEM of amorphous undoped and doped samples revealed small spherical nanoparticles of a few (1-4) nanometers aggregated into larger spherical clusters, while introducing different dopant ions into the Sb2S3 structure did neither influence the spherical morphology nor the sizes of samples. The presence of the basic elements (S and Sb) and dopants (Cu, Se, or Zn) was confirmed by EDX analysis and mapping. Additionally, field emission scanning electron microscopy (FE-SEM) was performed on the Zn-doped Sb2S3 sample, confirming spherical morphology as well as quantitative incorporation of Zn in the Sb2S3 lattice. X-ray powder diffraction (XRPD) results of the non-doped and doped samples revealed an amorphous structure. The crystalline Zn-doped Sb2S3 samples obtained by heating the amorphous ones revealed well-defined peaks from only the Sb2S3 phase, confirming a successful doping process. Diffuse reflectance spectroscopy (DRS) revealed high optical bandgap energies (2.03–2.12 eV) in comparison to the values (1.6–1.7 eV) obtained for large spherical non-doped and doped particles. It was demonstrated that there is not only a significant reduction in particle size compared to previously synthesized non-doped and doped amorphous nanoparticles of the same composition, but that there is also a significant increase in the bandgap values of 0.4-0.5 eV, which could be attributed to a quantum size effect. X-ray photoelectron spectroscopy (XPS) measurements revealed pure phase composition without any impurities for the undoped sample, and characteristic peaks for copper 2p, selenium, and zinc Auger peaks for the doped samples, respectively. The XPS valence band measurements were performed due to the weak Zn Auger peak, confirming a shift towards lower binding energy compared to the non-doped sample, demonstrating the doping of the observed sample. Photoluminescence (PL) measurements show that embedding Zn into the Sb2S3 host lattice suppresses the wide luminescence band with peaks at 1.7 eV, 2.0 eV, 2.2 eV, and 2.4 eV, which is related to intrinsic defects. Furthermore, the energy dependence of the light emission on the size of the synthesized nanoparticles suggests that the quantum confinement effect causes the light emission.

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BaS:MnS:Sb₂S₅ Mixed Metal Chalcogenide Cubes: Synthesis, Characterization, and Exploring Energy Storage and Production Potential

Ahmad,

Jaffri,

Al‐Hawadi

et al. 2024

Applied Organom Chemis

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Energy‐efficient semiconducting BaS:MnS:Sb2S5 has been synthesized using a single source precursor method. The resulting dithiocarbamate metallic sulfide has an average crystallite size of 17.77 nm and a small band gap of 3.82 eV. A functional group investigation revealed the presence of several bonds, including the metal sulfide bond. This sulfide exhibited a double‐step thermal breakdown pattern. BaS:MnS:Sb2S5 particles were formed like cubes and tended to form cube‐like formations. The electrochemical charge‐storing behavior of BaS:MnS:Sb2S5 was investigated using a nickel foam electrode and a sulfide slurry. The fabricated electrode demonstrated a satisfactory capacity for charge storage, with a specific capacitance of 762.83 F g−1. This indicates a substantial amount of potential for long‐term energy storage utilizing electrodes. This electrode has a specific power density of 9084.78 W kg−1 and a low series resistance of (Rs) = 0.71 Ω, as per impedance measurements. Electro‐catalysis produced an OER overpotential and a corresponding Tafel slope of 233 mV and 157 mV/dec from the electrode. Conversely, for HER activity, the obtained overpotential and subsequent Tafel slope were 386 mV and 73 mV dec−1, respectively.

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Investigating the effect of Zn doping on physical properties of nanostructured Sb2S3 thin films by dip-coating technique

Cited by 15 publications

References 35 publications

Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect

Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect

Amorphous non-doped and Se, Cu, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: Bandgap tuning and possible observation of the quantum size effect

BaS:MnS:Sb₂S₅ Mixed Metal Chalcogenide Cubes: Synthesis, Characterization, and Exploring Energy Storage and Production Potential

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Investigating the effect of Zn doping on physical properties of nanostructured Sb2S3 thin films by dip-coating technique

Cited by 15 publications

References 35 publications

Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect

Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect

Amorphous non-doped and Se, Cu, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: Bandgap tuning and possible observation of the quantum size effect

BaS:MnS:Sb2S5 Mixed Metal Chalcogenide Cubes: Synthesis, Characterization, and Exploring Energy Storage and Production Potential

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BaS:MnS:Sb₂S₅ Mixed Metal Chalcogenide Cubes: Synthesis, Characterization, and Exploring Energy Storage and Production Potential