Investigating the Effects of Channel Length and High-K Dielectric Materials on the Performance of Double-Gate MOSFETs

Design and Simulation of Bi-Layer Optimized High K- Dielectric Medium for N-Mosfet with Wild Horse Optimization to Improve Electrical Characteristics

“…However, if the gate length scale is being executed, the drive continues to decrease the dielectric stack's thickness. 6 Comprehending the basic processes for dependability provides mitigation through process adjustments and an improvement in performance, operating voltage (Vmax), and reliability. In order to improve performance with a lower leakage current, the high-k dielectric medium which includes silicon nitrate and hafnium dioxide is employed in the proposed n-MOSFET.…”