This paper proposed an in-situ electrical method that can identify the drive beam width and the sense beam width of the MEMS gyroscope at the wafer level. The mechanical frequencies of two special modes were selected to characterize the beam width. Ten chips distributed on a wafer was selected for experiments. The experimental results indicate that the etching error increasing from the wafer center to the edge, and the dispersion on a wafer with a radius of 75 mm is about 300 nm. Optical microscopy was used to prove the reliability of the method and the wafer-level data verified the distribution of the etching error. This work is aimed at providing a method for fabless designers to explore the fabrication imperfections during the MEMS wafer processing.