Investigating the Efficacy of Hafnium Dioxide Barrier Layers to Halt Copper Oxide Formation in Redistribution Layers for Three-Dimensional (3D) Packaging

Chery, Emmanuel; Armini, Silvia

doi:10.1021/acs.jpclett.2c02080

Cited by 7 publications

(3 citation statements)

References 17 publications

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“…5, the barrier properties of a 12 nm thin HfO 2 layer are not affected by the presence of moisture and the RDL lines remain free from oxidation after the stress. For this material, a critical thickness around 9 nm was previously reported by the authors [47]. While these results would suggest that HfO 2 is better suited than Al 2 O 3 as an RDL capping layer, the manufacturability metrics favor the higher deposition rate of Al 2 O 3 in the low temperature range.…”

Section: Protection Against Copper Oxidationsupporting

confidence: 55%

Inorganic Capping Layers in RDL Technologies: Process Advantages and Reliability

Chery

Bhatia

Pinho

et al. 2023

JOM

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Atomic layer-deposited (ALD) inorganic films were processed on top of copper metal lines in a polymer-based redistribution layer (RDL). The primary objective was to develop capping layers thinner than 15 nm to prevent copper oxidation. Due to their uniformity and high density, ALD layers are established permeation barriers. Nonetheless, owing to the presence of polymers in the final product, a low deposition temperature is required, resulting in an increased defect density and a greater susceptibility to degradation by moisture. In this study, various inorganic cappings, based on Al2O3, HfO2 and TiO2, deposited at 100 °C were integrated in an RDL stack. It is demonstrated that they impede the reaction of the polymer photo acid generator with copper, improving the lithography process, and ultimately allowing to print smaller critical dimensions. Additionally, capping layers built upon Al2O3 or HfO2 are shown to fully block copper oxidation after reliability stress tests.

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Section: Protection Against Copper Oxidationsupporting

confidence: 55%

Inorganic Capping Layers in RDL Technologies: Process Advantages and Reliability

Chery

Bhatia

Pinho

et al. 2023

JOM

Self Cite

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“…As shown in Figure 12 a, the current mainstream RDL antioxidant technology is to use low-temperature atomic layer deposition (ALD) to deposit a layer of inorganic film on the copper wiring to block the entry of oxygen [ 81 , 82 , 83 ]. For example, Pinho [ 84 ] describes a process to integrate an oxygen diffusion barrier into the top of an RDL stack using atomic layer deposition (ALD), which exhibits a good barrier effect and can prevent Cu oxidative delamination.…”

Section: The Most Recent Solutions For Delamination Failurementioning

confidence: 99%

Delamination of Plasticized Devices in Dynamic Service Environments

Tian,

Chen,

Zhang

et al. 2024

Micromachines

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With the continuous development of advanced packaging technology in heterogeneous semiconductor integration, the delamination failure problem in a dynamic service environment has gradually become a key factor limiting the reliability of packaging devices. In this paper, the delamination failure mechanism of polymer-based packaging devices is clarified by summarizing the relevant literature and the latest research solutions are proposed. The results show that, at the microscopic scale, thermal stress and moisture damage are still the two main mechanisms of two-phase interface failure of encapsulation devices. Additionally, the application of emerging technologies such as RDL structure modification and self-healing polymers can significantly improve the thermal stress state of encapsulation devices and enhance their moisture resistance, which can improve the anti-delamination reliability of polymer-based encapsulation devices. In addition, this paper provides theoretical support for subsequent research and optimization of polymer-based packages by summarizing the microscopic failure mechanism of delamination at the two-phase interface and introducing the latest solutions.

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“…Importantly, the oxide boundary can be shifted because of the re-actions, but the key factor of the actual oxide layer growth is the diffusion of copper atoms from the top of the Cu 2 O oxide surface to the top surface of CuO oxide, where the generation of a new CuO oxide layer occurs (Figure 2). [47,48] This key process was modeled in three stages: i) dissociation of the cuprous oxide, ii) jump of the released copper atom into the neighboring node occupied by the cupric oxide, and iii) the generation of the cuprous oxide in the new location of the copper atom (see details in the Supporting Information).…”

Section: General Description Of the Modelmentioning

confidence: 99%

Hierarchical Nanomaterials by Selective Deposition of Noble Metal Nanoparticles: Insight into Control and Growth Processes

Baranov

Belmonte

Levchenko

et al. 2023

Advcd Theory and Sims

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Complex hierarchical metamaterials are currently the focus of many cutting‐edge studies due to their potential to advance such critically important areas of technology as energy storage and transformation, sensing, photovoltaics, nano‐medicine, antibacterial and self‐regenerating materials. However, the deterministic design of novel hierarchical metamaterials remains problematic due to the lack of efficient, highly reliable methods for controlling the internal structure and architecture of materials. A comprehensive advanced model is proposed to simulate the formation of complex hierarchical metamaterials with a controllable structure. The control is achieved via selective deposition of noble metal nanoparticles (Au, Au, Pd, Pt). Moreover, the novel method for the nanofabrication is theoretically examined and experimentally verified. This approach allows for the sophisticated spatiotemporal control of growth conditions and, as a result, achieving the targeted internal structure of metamaterials. This opens a way to the deterministic design and formation of complex multi‐material metamaterials on the basis of metal oxides and noble metal nanoparticles. Moreover, a fundamental insight related to the longstanding question about the prevalence of bottom‐up versus top‐down growth for various materials and systemswhich is challenging to directly verify experimentally is presented.

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Investigating the Efficacy of Hafnium Dioxide Barrier Layers to Halt Copper Oxide Formation in Redistribution Layers for Three-Dimensional (3D) Packaging

Cited by 7 publications

References 17 publications

Inorganic Capping Layers in RDL Technologies: Process Advantages and Reliability

Inorganic Capping Layers in RDL Technologies: Process Advantages and Reliability

Delamination of Plasticized Devices in Dynamic Service Environments

Hierarchical Nanomaterials by Selective Deposition of Noble Metal Nanoparticles: Insight into Control and Growth Processes

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