Investigating the illumination and deformation effects on the electrical properties of a CuMnZn-based-diode

Aldırmaz, E.

doi:10.1007/s10854-022-08419-y

Cited by 6 publications

(1 citation statement)

References 39 publications

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“…Semiconductor materials have become increasingly valuable due to technological advancements resulting from their applications, such as photo-diodes, solar cells, radio frequency detectors, and transistors [1][2][3][4]. The presence of a thin layer at a metal-semiconductor (MS) interface, which can transform it into metal-insulatorsemiconductor (MIS), metal-polymer-semiconductor (MPS), or metal-ferroelectric-semiconductor (MFS) structures, influences interface parameters, especially key Schottky barrier characteristics such as barrier height (Φ b ), ideality factor (n), and series resistance (R s ).…”

Section: Introductionmentioning

confidence: 99%

Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications

Demirezen,

Dere,

Çetinkaya

et al. 2023

Phys. Scr.

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Graphene oxide (GO) doped poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) interlayered Al/p-Si Schottky barrier diodes (SBDs) were manufactured by spin coating technique and investigated for the effects of GO concentration on electrical and photodiode parameters. The current-voltage (I-V), measurements for the different mass ratios of GO:P3HT:PCBM (0:1:1(S1), 0.5:1:1(S2) and 2:1:1(S3)) used diodes allowed the determination of key electrical parameters, including ideality factor (n), barrier height (ΦB), series resistance (Rs), shunt resistance (Rsh), interface states density (Nss) and optical sensing behaviors in dark and different illumination levels (10, 30, 60, 80 and 100 mW/cm2). The rectification ratio (RR) was found to be in the order of 104. The trends obtained for the n, ΦB, Rs/Rsh and Nss show that these are influenced by the contribution of the GO. Observed increasing behavior of reverse current with increasing illumination shows that this SBDs can be use as photo-diodes/sensors/detectors. On the other hand, it was observed that the linear dynamic range (LDR), which is important parameter for image sensors, increased (6.86, 16.95 and 26.98 for S1, S2 and S3, respectively) with increasing GO contribution. In addition, to investigate and compare in more detail, capacitance-voltage (C-V) and conductance-voltage (G-V) measurements used for the determination of diffusion potential (VD), concentration of dopant acceptor atoms (NA), Fermi energy level (EF), depletion layer width (WD) for low frequency (1kHz) and high frequency (1MHz). The measured capacitance values showed a high value at the low frequency in comparison with the high frequency. This behavior explained on the basis of Nss. The findings suggest that the prepared diodes has the potential to serve as a photo-diodes/sensors/detectors for optical sensing applications.

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Section: Introductionmentioning

confidence: 99%