Investigating the inhibition of short channel effects using different materials of gate insulator layers in FinFET

Abstract

As the evolution of FinFET technology continues, traditional gate insulator materials, such as SiO2, face challenges in meeting the demands of modern applications, especially when it comes to gate leakage current control. Emerging as promising contenders to replace SiO2, materials with higher dielectric constants, notably HfO2 and Si3N4, are drawing significant attention in the semiconductor community. Leveraging the advanced capabilities of tools like Silvaco TCAD, an in-depth analysis was conducted to compare the performance and gate leakage current control abilities of SiO2, HfO2, and Si3N4, utilizing the Quantum examples 3D FinFET model. The findings not only highlight the potential of HfO2 and Si3N4 as worthy replacements for SiO2 but also accentuate the distinct advantages of SiO2, making it particularly well-suited as a substitute. This exploration goes beyond a mere comparison of materials. It dives deep into understanding their behaviors under various operational conditions, laying a foundation for potential breakthroughs and fostering the next wave of innovations in semiconductor technology.