Investigating the latent reliability degradation of partially depleted SOI devices induced by high-energy heavy ions irradiation

Ma, Teng; Yu, Xuefeng; Paccagnella, A.; Guo, Qi

doi:10.1016/j.microrel.2019.113425

Cited by 2 publications

(1 citation statement)

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“…Silicon-on-insulator (SOI) technology has always been the focus of research in the field of microelectronics. Compared with bulk silicon devices, due to their advantages of full medium isolation and high-temperature resistance, SOI devices are widely used in [ 1 , 2 ]. With the shrinking size of the integrated circuit and the thinning gate oxide thickness of MOSFETs, time-dependent dielectric breakdown (TDDB) remains a key reliability concern in MOSFETs in recent years [ 3 , 4 , 5 ].…”

Section: Introductionmentioning

confidence: 99%

Experimental Study on Critical Parameters Degradation of Nano PDSOI MOSFET under TDDB Stress

et al. 2023

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In today’s digital circuits, Si-based MOS devices have become the most widely used technology in medical, military, aerospace, and aviation due to their advantages of mature technology, high performance, and low cost. With the continuous integration of transistors, the characteristic size of MOSFETs is shrinking. Time-dependent dielectric electrical breakdown (TDDB) is still a key reliability problem of MOSFETs in recent years. Many researchers focus on the TDDB life of advanced devices and the mechanism of oxide damage, ignoring the impact of the TDDB effect on device parameters. Therefore, in this paper, the critical parameters of partially depleted silicon-on-insulator (PDSOI) under time-dependent dielectric electrical breakdown (TDDB) stress are studied. By applying the TDDB acceleration stress experiment, we obtained the degradation of the devices’ critical parameters including transfer characteristic curves, threshold voltage, off-state leakage current, and the TDDB lifetime. The results show that TDDB acceleration stress will lead to the accumulation of negative charge in the gate oxide. The negative charge affects the electric field distribution. The transfer curves of the devices are positively shifted, as is the threshold voltage. Comparing the experimental data of I/O and Core devices, we can conclude that the ultra-thin gate oxide device’s electrical characteristics are barely affected by the TDDB stress, while the opposite is true for a thick-gate oxide device.

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