Investigating the nature of Si doping in Al0.23Ga0.77N

James, G. R.; Leitch, A.W.R.; Wagener, M.; Omnès, Franck

doi:10.1016/j.physb.2003.09.057

Cited by 2 publications

(4 citation statements)

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“…It is thus proposed that the increase in the S-curve in Si-doped Al x Ga 1-x N is due to further localization of excitons at neutral Si donors. This is plausible since it has been shown for GaN [8] and Al 0.23 Ga 0.23 N [4] that the low temperature quenching of the PL intensity (E 1 obtained in region I) is due to the delocalization of excitons bound at neutral Si donors and furthermore that E 1 ≈ 0.2 E D . This would also explain the increase in the E loc energy observed in Si-doped material.…”

Section: Discussionmentioning

confidence: 69%

“…In Figs. (a) and (b), the PL peak energy is also shifted to lower energies, with respect to the undoped samples. Both the FWHM increase and the PL peak shift are attributed to bandgap tailing and renormalization [4,8]. In Fig.…”

Section: Resultsmentioning

confidence: 85%

“…Table 1 lists the values of E 1 and E 2 , as well as the 300 K carrier concentration, n, and previously reported Hall activation energied E D [4]. …”

Section: Resultsmentioning

confidence: 99%

“…The photoluminescence measurements were performed between 12 and 300 K, using a 20 mW frequency doubled argon ion laser (λ = 244 nm). The electrical properties of the layers were investigated using Hall effect measurements, the results of which are published elsewhere [3,4]. Undoped Al x Ga 1-x N: For the undoped GaN sample ( Fig.…”

Section: Methodsmentioning

confidence: 99%

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The effect of Si‐doping on the variable temperature photoluminescence properties of AlGaN alloys

James¹,

Leitch

Wagener

et al. 2004

phys. stat. sol. (c)

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A study of the optical properties of a series of undoped and Si-doped Al x Ga 1-x N layers has been performed using variable temperature photoluminescence (PL) measurements. The Al mole content, x, of the Al x Ga 1-x N layers, grown by metalorganic vapour phase epitaxy (MOVPE) on c-sapphire substrates, was varied between 0 and 0.5. The PL properties of the layers were studied between 12 and 300 K. The PL peak energy exhibited the anomalous "S-curve" behaviour (increase-decrease-increase) with increasing temperature. This anomolous behaviour was seen to be more pronounced in the Si-doped material, and subsequently a larger localization energy was measured for these samples. The thermal quenching of the integrated PL intensity was well fitted assuming that two non-radiative channels are present in the layers, thus yielding two PL activation energies. These activation energies are then compared to the Hall effect activation energy. From a correlation between the low temperature PL activation energy and the Hall activation energy, the low temperature quenching of the integrated PL intensity is attributed to the delocalisation of excitons bound to neutral Si donors.

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Section: Discussionmentioning

confidence: 69%

Section: Resultsmentioning

confidence: 85%

“…Table 1 lists the values of E 1 and E 2 , as well as the 300 K carrier concentration, n, and previously reported Hall activation energied E D [4]. …”

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations