We report on molybdenum disulfide (MoS 2 ) flakes grown by chemical vapor deposition (CVD), which exhibit an increased photoluminescence (PL) intensity at the edge of the flake under moderate irradiation. The photo-induced chemisorption of O 2 and H 2 O to sulfur vacancies in the edge regions is the origin of the modulated PL intensity. The MoS 2 flakes were analyzed utilizing correlated multispectral wide-field microscopy with stochastic optical reconstruction microscopy (STORM). The advantage of the wide-field approach compared to conventional point scanning microscopy is a faster acquisition over a larger field of view without exposing the sample to high irradiance conditions. This enables in situ and realtime measurements of the PL intensity fluctuations and the identification of defects within the flake. The STORM postprocessing reveals fine structures within the flake and enhances the contrast, which cannot be revealed by point scanning microscopy. In particular, by increasing the intensity over the nondestructive threshold, the stochastic optical reconstruction enables the study of the kinetics of defect domain generation with reduced PL and Raman intensity caused by lattice defects or photo-oxidation of MoS 2 to MoO 3 . Additional measurements of the work function by Kelvin force microscopy, the topography, and the friction force by AFM reveal that the defect domains start to form at the edge of the flake, with a larger interlayer height and work function but reduced friction force compared to MoS 2 . The stochastic optical reconstruction microscopy postprocessing is a powerful technique to understand the layer-by-layer photo-oxidation of MoS 2 flakes and gives new insights in the design of, for example, MoS 2 /MoO 3 heterostructures.