ZnSe thin films have been deposited on non-conducting glass substrates at different selenium concentrations using photo-assisted chemical bath deposition method. The films were deposited for 2.0h at 80℃ and annealed for 2.0h at 250℃. X-ray diffraction (XRD) revealed hexagonal structure with preferential orientation along the (002) plane and the crystallite sizes were about 9-11 nm. Raman scattering showed longitudinal optical phonon modes due to ZnSe and the effect of the Selenium concentration is noticed on the peak intensities of the XRD and Raman Scattering studies. Optical analysis showed higher absorbance in the visible region than near infrared spectrum making the thin films good materials for selective absorber surfaces. The estimated bandgap ranges between 2.37 and 2.70 eV. EDS confirmed the presence of the desired elements and revealed that the ratio of selenium to zinc declined after the sample prepared with 0.6 M selenium ion. Photoluminescence studies revealed three emission peaks which were due to defect state levels in ZnSe. By varying the selenium concentration, ZnSe was tuned to reddish color emission as confirmed by the CIE color chromaticity analysis. The selective absorption, wide bandgap and emission properties suggest that the material is promising for light emitting device applications.