Investigating the valence-band bound states in GaAs/GaAsSb/GaAs V-shaped quantum wells: The role of intense laser fields and position-dependent effective mass

Maleki, Sara; Haghighatzadeh, Azadeh; Attarzadeh, Amin; Radu, A.

doi:10.1016/j.physe.2022.115302

Cited by 9 publications

(18 citation statements)

References 54 publications

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“…This observation can be attributed to near-zero energy separation of the degenerate states for α 0 ¼ 7.5 nm (Table 1 and Figure 2 in Ref. 30).…”

Section: Theoretical Modelmentioning

confidence: 85%

“…The increased half-width of the well under higher laser-dressing parameters shows the tendency of the heavy hole to single confinement profiles instead of laser-dressed double ones associated with smaller half-widths (Figure 6 in Ref. 30). This situation supports the increased energy separations and the diminished overlap of wavefunctions due to the loss of the degeneracy (Figure 7 in Ref.…”

Section: Theoretical Modelmentioning

confidence: 92%

“…30 The numerical simulation of electronic characteristics was conducted using the finite element method in the COMSOL Multiphysics software. 30 Optical parameters were iteratively determined by following the density matrix approach as [33][34][35] E Q -T A R G E T ; t e m p : i n t r a l i n k -; e 0 0 5 ; 1 1 7 ; 5 0 5…”

Section: Theoretical Modelmentioning

confidence: 99%

“…28,29 Motivated by the theoretical realization of such nano/heterostructures, this research is a comprehensive study of the electronic and optical qualities of GaAs/GaAsSb/ GaAs valence band V-shaped quantum wells dressed by an intense laser field (ILF). 30,31 Thus, the current work explores linear and nonlinear optical (LO and NLO) properties found in GaAs/ GaAsSb/GaAs V-shaped quantum wells in conjunction with intra/valence-band changes between the two lowest bound states (LBS) of a heavy hole. Research is conducted to discover the contribution of the E-field, the well's geometry, and the Sb content, considering the ILF effects.…”

Section: Introductionmentioning

confidence: 99%

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Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling

Maleki,

Haghighatzadeh,

Attarzadeh

2024

J. Nanophoton.

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A single GaAs/GaAsSb/GaAs quantum well having a valence band profile was described in this study using the V-shaped potential. An external static electric field (E-field) and a high-frequency intense laser irradiation were utilized to examine the first-order linear and third-order nonlinear optical properties. The theoretical modeling was achieved using a compact-density matrix and iterative process in a two-level system framework. The position-dependent effective mass approximation was applied to solve the Schrödinger equation and evaluating the energy states and their corresponding wavefunctions for the two lowest bound states within the quantum well's valence band with regards to a heavy hole. We extended the investigation of the single V-shaped potential by incorporating the effects of the E-field, the well's half-width, and antimony (Sb) content on optical characteristics. The study on the combined effects of the intense laser field and the mentioned factors revealed that the peak positions and amplitudes of the linear and nonlinear optical characteristics were strongly influenced by variation in the laser strength. Specifically, we observed, that under higher laser dressing parameters, the application of the electric field played an important role. This occurred when the impact of the well's half-width and Sb content became prominent at values of lower laser-dressing parameters. It is significant to note that our findings will have potential real-world applications in photonics, optoelectronics, and related areas.

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“…This observation can be attributed to near-zero energy separation of the degenerate states for α 0 ¼ 7.5 nm (Table 1 and Figure 2 in Ref. 30).…”

Section: Theoretical Modelmentioning

confidence: 85%

Section: Theoretical Modelmentioning

confidence: 92%

Section: Theoretical Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling

Maleki,

Haghighatzadeh,

Attarzadeh

2024

J. Nanophoton.

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“…Recently, the growth of high quality quantum wells (QWs) by using the MBE technique not only improves the two dimensional (2D) electron mobility μ but also made it possible to design different shaped QW [1][2][3][4]. Out of these, maximum localization of the confinement potential occurs in the V-shaped QW (VQW) resulting in fascinating 2D-electron-gas (2DEG) properties and having potential applications in semiconductor laser diode, photo-detector, optical modulators, etc, based on the principle of intersubband transitions [5][6][7][8][9][10][11][12][13][14][15]. Application of electric field (F), magnetic field (H) or introducing structural asymmetry in a V-shaped QW leads to interesting nonlinear optical properties (NOP).…”

Section: Introductionmentioning

confidence: 99%

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Jena¹,

Sahu

Sahoo

et al. 2023

Phys. Scr.

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Here, we analyse the effect of structure parameters like well width (w), central barrier width (b), and alloy concentration (x) on multisubband electron mobility µ in a GaAs-AlxGa1-xAs based modulation doped asymmetric V-shaped-double-quantum-well (VDQW) structure. The asymmetry in the structure potential is generated through the difference in the doping concentrations (Nd) in the side barriers i.e., Nd1 (0 to 4×1018 cm-3) and Nd2 (2×1018 cm-3). The mobility µ is calculated by considering ionised impurity (imp) and alloy disorder (ad) scattering mechanisms. The continuous variation of x inside the well makes µad < µimp resulting in the dominance of ad-scattering on µ as a function of Nd1. As a result, at the interface an increase in x from 0.1 to 0.3 reduces µ around 40%. However, an increase in w symmetrically (w1 = w2) enhances µ. Further, the introduction of non-symmetric well profile (w1≠ w2) not only causes asymmetric redistribution of subband wave functions ψ0 and ψ1 in the wells, but also changes the position and hence occupation of subband energy levels, thereby influencing the subband mobility. As the difference in w1 and w2 increases, the system becomes more and more single subband occupied as a function of Nd1 and hence the mobility enhances due to the absence of intersubband scattering. Our results also reflected that an increase in b from 20 Å to 80 Å has a marginal effect on µ during single subband occupancy but improves µ during double subband occupancy through intersubband interaction.

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Linear and nonlinear optical absorption coefficients and refractive index changes of GaAs/GaAsSb/GaAs V-shaped quantum wells affected by intense laser fields

2023

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Investigating the valence-band bound states in GaAs/GaAsSb/GaAs V-shaped quantum wells: The role of intense laser fields and position-dependent effective mass

Cited by 9 publications

References 54 publications

Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling

Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Linear and nonlinear optical absorption coefficients and refractive index changes of GaAs/GaAsSb/GaAs V-shaped quantum wells affected by intense laser fields

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