Investigating thin film passivations for IGZO dual gate pH sensors fabricated at low temperature

Pavlidis, Spyridon; Getz, P.; Hagen, Joshua A.; Kelley‐Loughnane, Nancy; Bayraktaroglu, B.; Brand, Oliver

doi:10.1109/transducers.2015.7181178

Cited by 5 publications

(5 citation statements)

References 12 publications

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“…For realistic performance benchmarking, S V is taken as the figure-of-merit and maximum S V of the proposed NC-DG-ISFET device is compared with the voltage sensitivities obtained from fabricated baseline dual-gated ISFETs ,,,,− and a fabricated NC-ISFET reported in the literature. Some of these results are summarized in the bar plot in Figure .…”

Section: Resultsmentioning

confidence: 99%

Negative Capacitance Dual-Gated ISFETs as Ultra-Sensitive pH Sensors

Islam Sakib,

Hasan,

Mohona

et al. 2023

ACS Omega

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Ion-sensitive field-effect transistors (ISFETs) are promising candidates for next-generation pH sensors, enabling highly sensitive and label-free biomolecular and chemical detection. Emerging FETs based on the negative capacitance (NC) effect offer steep-subthreshold switching and higher drive current simply by integrating a ferroelectric (FE) material into the gate stack. Here, we propose a novel NC dual-gated ISFET (NC-DG-ISFET)-based pH sensor, with FE layers integrated into both the top and the bottom gate stacks. The current and voltage sensitivities of the proposed device are extracted from its transfer characteristics, obtained by combining the numerical solutions of the one-dimensional (1D) Landau-Khalatnikov (L-K) equation with three-dimensional (3D) technology computer-aided design (TCAD) simulations. Results show that the NC-DG-ISFET can surpass the sensitivity of some of the state-of-the-art DG-ISFET pH sensors. The inclusion of the FE layers into the gate stacks of a baseline DG-ISFET leads to 51% reduction in subthreshold swing (SS), causing a 5× increase in current sensitivity ( S I ) in the subthreshold region of operation and a 2× increase in voltage sensitivity ( S V ). The influence of channel thickness and channel length on the sensor performance is also invesitgated. The findings presented here provide a new pathway to leverage the steep-switching behavior of NCFETs for the next generation of highly sensitive and label-free DG-ISFET pH sensors.

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Section: Resultsmentioning

confidence: 99%

Negative Capacitance Dual-Gated ISFETs as Ultra-Sensitive pH Sensors

Islam Sakib,

Hasan,

Mohona

et al. 2023

ACS Omega

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“…For example, Smith et al presented a flexible extended-gate ion-sensitive field-effect transistor (ISFET) biosensor based on the IGZO-based TFTs using LED technology [19] . The ISFETs are well used as pH sensitive biosensors with different dielectrics such as SnO 2 [136] , TiO 2 [126] and ITO [19] as the pH sensitive layers [18,125] . In this work, the ISFET drain current was increased as the pH decreased, which was due to the H + ion protonation of the ITO extended-gate electrode surface.…”

Section: Ph Sensorsmentioning

confidence: 99%

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Zhu

Jiang

et al. 2021

J. Semicond.

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Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. This article reviews the recent progress and major trends in the field of IGZO-based TFTs. After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs, an overview of IGZO materials and IGZO-based TFTs is given. In this part, IGZO material electron travelling orbitals and deposition methods are introduced, and the specific device structures and electrical performance are also presented. Afterwards, the recent advances of IGZO-based TFT applications are summarized, including flat panel display drivers, novel sensors, and emerging neuromorphic systems. In particular, the realization of flexible electronic systems is discussed. The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.

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“…Dual-gate InGaZnO TFTs fabricated using atomic-layer deposition (ALD) high-k dielectrics were proposed for chemical and biosensor applications. 35) ALD is effective for achieving good step coverage at the edges of the source/ drain electrodes, resulting in suppression of hydrolysis and subsequent leakage currents. They also demonstrated that the dual-gate TFT pH sensors benefit from an enhancement of pH sensitivity arising from the capacitive coupling.…”

Section: Chemical-sensor Applicationsmentioning

confidence: 99%

“…We have also published some papers that deal with pHsensor application of InGaZnO TFTs. [40][41][42][43][44] Like the previous papers 34,35) discussed above, the main point of our pH-sensor application is that we make use of the significant capacitive coupling effect discussed in Sect. 2 to achieve high sensitivity beyond the Nernstian limit.…”

Section: Chemical-sensor Applicationsmentioning

confidence: 99%

Sensor applications of InGaZnO thin-film transistors

Takechi¹,

Iwamatsu

2019

Jpn. J. Appl. Phys.

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This article reviews and discusses sensor applications of bottom-gate type InGaZnO thin-film transistors (TFTs). First, we discuss specific features of InGaZnO TFTs that differentiate them from Si-based TFTs, such as the significant capacitive coupling between the bottom-gate and top-gate electric fields and material properties such as carrier generation mechanism. Although flat-panel displays driven by InGaZnO TFTs have been developed, these features have not necessarily been utilized. Based on these features, next, we review and discuss possible chemical-sensor concepts of InGaZnO TFTs, like gas sensors, pH sensors, and biochemical sensors. We also cover possible physical-sensor concepts like photo sensors, temperature sensors, and electrostatic potential sensors. Regarding these sensor concepts, the passivation layer in the InGaZnO TFTs or the InGaZnO layer itself works as the sensitive membrane that responds to particular substances. These sensor concepts can provide a way to incorporate InGaZnO TFTs into a wide variety of sensor applications.

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Investigating thin film passivations for IGZO dual gate pH sensors fabricated at low temperature

Cited by 5 publications

References 12 publications

Negative Capacitance Dual-Gated ISFETs as Ultra-Sensitive pH Sensors

Negative Capacitance Dual-Gated ISFETs as Ultra-Sensitive pH Sensors

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Sensor applications of InGaZnO thin-film transistors

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