Investigation and Mathematical Modelling for Different Scattering Mechanisms in AlGaN/GaN HEMT

Abstract

We investigated different scattering mechanisms in GaN High Electron Mobility Transistor with AlGaN barrier layer. This investigation leads to a quantum mechanical approach to develop mathematical model for different scattering limited mobilities. From these analytical results comparison between different scattering mechanisms were discussed under various two dimensional electron sheet charge densities. Finally total mobility curve was developed under both room (300K) and low (77K) temperatures for the first time.