Investigation and Mitigation of Analog SET on a Bandgap Reference in Triple-Well CMOS Using Pulsed Laser Techniques

# Shunt linear voltage regulators are still used in situations where other kinds of regulators are not advised. This paper explores a mechanism liable to induce long duration pulses (∼ 100 µs) in these devices, which is eventually demonstrated using a pulsed laser facility. Data issued from these tests helps to understand how the electrical network parameters as well as the non-idealities of the devices aect the characteristics of the transients. Finally, this phenomenon is investigated in similar structures with identical purpose.

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“…with single photon absorption, 1 pJ ∼ 3 MeV·mg·cm −2 . This ratio has been conrmed by more recent works [14].…”

supporting

confidence: 62%

“…A typical example is the Zener diode ( sometimes focusing on total ionizing dose [8,9,10,11], sometimes on the single event transients (SETs) in these $ devices [3,12,13]. A recent paper [3] has investigated the characteristics of the SETs in a COTS (Commercial- and references [14,15]. Some characteristics of the transients can be easily deduced.…”

mentioning

confidence: 99%

Characteristics of the long duration pulses in a shunt linear voltage regulator

Palomar

Franco

Izquierdo

et al. 2014

Nuclear Instruments and Methods in Physics Research Section A:

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“…During the following years, other authors confirmed the possibility of this kind of events [2]- [4]. Of particular importance was the work of Zanchi et al [4] who attributed the appearance of LPDs to external devices rather than internal components, i.e., LPDs in a band-gap BiCMOS voltage reference were related to an external capacitor used to stabilize the system and remove high frequency noise. The drawback of this approach was that the emitter-follower output stage of the reference was converted into a circuit very similar to that of a peak detector.…”

Section: Introductionmentioning

confidence: 95%

Peak Detector Effect in Low-Dropout Regulators

Palomar

Franco

Lopez-Calle

et al. 2013

IEEE Trans. Nucl. Sci.

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Abstract-The peak detector effect is a phenomenon that makes single event transients much longer once an error amplifier switches from linear to saturation zone due to the presence of external capacitors. This is so-called since it was discovered in a simple voltage reference in which a parasitic lossy peak detector was unwillingly built in the output stage. In this paper, peak detector effect is generalized to explain the appearance of long duration pulses in typical low dropout voltage regulator built with discrete devices. This effect has been related to the way in which the negative feedback loop is closed and to the kind of pass device in the output stage. Thus, if the linear voltage regulator consists in an error amplifier the output of which controls a current source, the peak detector effect will occur if the current source is unidirectional, the output load does not drain enough current and is in parallel with an external capacitor.

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“…As a result, SETs in bandgap reference circuits dramatically affect the performance and function of the circuits and systems. The bandgap reference is reported to be increasingly sensitive to SETs in recent years [3], [4]. Although there are a large number of studies on radiation hardened analog/mix signal circuits, such as phase loop locks (PLLs) and amplifiers [5]- [21], there are not many papers dedicated to the topic of hardening the bandgap reference circuits.…”

Section: Introductionmentioning

confidence: 99%

An RHBD Bandgap Reference Utilizing Single Event Transient Isolation Technique

Ren

Chen

2016

IEEE Trans. Nucl. Sci.

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A novel radiation-hardened-by-design (RHBD) structure to reduce the single event transient (SET) amplitude in analog circuits is presented in this paper. This structure features an SET isolation technique, which contains a sensor and a switch. The sensor turns off the switch when it detects a voltage transient at the sensitive node, in which case the core circuit is temporarily isolated from the output. Once the voltage at the sensitive node recovers, the sensor turns on the switch again in order to connect the core circuit to the output. This RHBD technique was validated based on a typical bandgap reference circuit, which was fabricated in the IBM 130 nm technology. The simulation results demonstrated a significant reduction in the SET amplitude, which was further verified with the pulsed laser. The additional sensor and the switch in the circuit only produce a minor amount of additional power dissipation if they are properly chosen. The area overhead is rendered negligible by means of selecting the appropriate sizes of transistors for the RHBD structure.Index Terms-Bandgap reference, pulsed laser, radiation hardened by design (RHBD), SET isolation, single event transient (SET).

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Investigation and Mitigation of Analog SET on a Bandgap Reference in Triple-Well CMOS Using Pulsed Laser Techniques

Cited by 15 publications

References 12 publications

Characteristics of the long duration pulses in a shunt linear voltage regulator

Characteristics of the long duration pulses in a shunt linear voltage regulator

Peak Detector Effect in Low-Dropout Regulators

An RHBD Bandgap Reference Utilizing Single Event Transient Isolation Technique

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