Investigation and Modeling of Stress Interactions on 90 nm Silicon on Insulator Complementary Metal Oxide Semiconductor by Various Mobility Enhancement Approaches

Abstract

Within the framework of the thermally activated process of the flux line or flux line bundles, and by time integration of the 1D equation of motion of the circulating current density J (ρ, t), which is suitable for thin superconducting films (R d, λ), we present numerical calculations of the current profiles, magnetization hysteresis loops and ac susceptibility χ n = χ n + iχ n for n = 1, 3 and 5 of a thin disc immersed in an axial time-dependent external magnetic field B a (t) = B dc + B ac cos(2πνt). Our calculated results are compared with those of the critical state model (CSM) and found to prove the approximate validity of the CSM below the irreversibility field. The differences between our computed results and those of the CSM are also discussed.