Investigation Into Active Gate-Driving Timing Resolution and Complexity Requirements for a 1200 V 400 A Silicon Carbide Half Bridge Module

Parker, Mason; Şahin, İlker; Mathieson, Ross; Finney, S.J.; Judge, Paul D.

doi:10.1109/ojpel.2023.3250086

Cited by 8 publications

(1 citation statement)

References 35 publications

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“…This board converts the logical control signal into the appropriate voltage values necessary to turn the resistor on and off. A gate driver can perform transistor protection functions using hardware and algorithmic approaches [11][12][13]. Application-specific integrated circuits are often used in driver solutions as well as field-programmable gate array (FPGA) technologies [14,15].…”

Section: Introductionmentioning

confidence: 99%

Development and Implementation of Algorithms for an Intelligent IGBT Gate Driver Using a Low-Cost Microcontroller

Zolotov,

Ledovskikh,

Zhukov

et al. 2024

Applied Sciences

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High-power IGBTs are used in power electronic converters in a variety of applications: traction drives, renewable power converters, mining equipment, oil and water pumping, and so on. To control a transistor, a special gate driver board is required. This board converts the logical control signal into the appropriate voltage values necessary to turn the resistor on and off. Gate drivers can perform the protection functions of IGBTs using hardware and algorithmic approaches. Application-specific integrated circuits are often used in driver solutions to implement control and protection. The development of an application-specific integrated circuit is a time-consuming and expensive procedure, which increases the cost of the driver. This paper describes the control and protection algorithms implemented in an intelligent IGBT driver based on a low-cost microcontroller. The use of the microcontroller makes the gate driver design more flexible and allows for the accurate tuning of the protection thresholds. The gate driver protects the IGBT from short-circuiting, overcurrent, and overvoltage, monitors the voltage supply, and controls the switch on and switch off processes in the transistor. The performance of the protection algorithms was tested experimentally using a specialized test bench.

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Section: Introductionmentioning

confidence: 99%

Development and Implementation of Algorithms for an Intelligent IGBT Gate Driver Using a Low-Cost Microcontroller

Zolotov,

Ledovskikh,

Zhukov

et al. 2024

Applied Sciences

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Investigation into active‐gate‐driving performance and potential closed‐loop controller implementations for silicon carbide MOSFET modules

Şahin,

Parker,

Mathieson

et al. 2024

IET Power Electronics

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Active gate driving (AGD) is a promising concept for achieving high‐performance power transistor switching. This is particularly crucial for Silicon Carbide (SiC) MOSFETs since their inherently fast switching characteristics give rise to severe overshoots and oscillations which translate into increased levels of electromagnetic interference (EMI) emissions. In this paper, an AGD strategy using a single‐pulse applied during the switching transient is considered for a 1200 V 400 A SiC MOSFET module. The effect of single‐pulse timing, load current, and temperature on the switching performance is analyzed in detail. The radiated EMI reduction benefits are quantified by H‐field and E‐field probes. A conceptual closed‐loop AGD approach is presented and compared to open‐loop operation. For the transistor turn‐off case under full load current of 400 A, experimental results show that it is possible to reduce voltage overshoot by 43.3%, voltage and current oscillations by 69.7% and 52.2% respectively, and EMI by 76.6%, with a trade‐off in the switching energy by a relatively minor increase of 18.2%, compared to the conventional gate driving case. For the turn‐on case, current overshoot was reduced by 32.7%, EMI by 52%, voltage and current oscillations by 54.6% and 52.8%, respectively, with a penalty of 50.9% increase in the switching loss.

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Quasi square wave operation of modular multilevel converter based dual active bridge DC–DC converter with inductor energy recovery

Xia,

Hao,

Judge

et al. 2024

IET Power Electronics

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The modular multilevel DC–DC transformer (MMDCT) provides a reliable solution to overcome the challenges of conventional dual‐active‐bridge converters in terms of power semiconductors ratings and dv/dt stress on transformer coupling windings. An alternative modulation method, quasi‐square‐wave, was proposed to reduce the cell capacitance of modular multilevel bridges. However the application of quasi‐square‐wave modulation is found to result in underdamped switching transients and losses when resetting energy stored in arm inductance. This paper presents a detailed transient analysis of MMDCT arm insertion based on an equivalent circuit, which contributes to a more accurate component sizing and gives voltage estimation for individual half‐bridge submodules. Additionally, a revised switching sequence is proposed to recover this inductor energy and lower the oscillation‐related losses. Simulated and experimental results from a scaled test rig of MMDCT are implemented and validate the proposed component sizing and switching sequence, indicating that the converter efficiency can be improved under revised switching sequence. Finally, a silicon carbide based, high‐frequency MMDCT is proposed and simulated.

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Investigation Into Active Gate-Driving Timing Resolution and Complexity Requirements for a 1200 V 400 A Silicon Carbide Half Bridge Module

Cited by 8 publications

References 35 publications

Development and Implementation of Algorithms for an Intelligent IGBT Gate Driver Using a Low-Cost Microcontroller

Development and Implementation of Algorithms for an Intelligent IGBT Gate Driver Using a Low-Cost Microcontroller

Investigation into active‐gate‐driving performance and potential closed‐loop controller implementations for silicon carbide MOSFET modules

Quasi square wave operation of modular multilevel converter based dual active bridge DC–DC converter with inductor energy recovery

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