Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons

Maremyanin, K. V.; Паршин, В.В.; Serov, E. A.; Rumyantsev, V. V.; Kudryavtsev, K. E.; Dubinov, A. A.; Fokin, A. P.; Morosov, S. S.; Aleshkin, V. Ya.; Glyavin, M. Yu.; Денисов, Г. Г.; Morozov, S. V.

doi:10.1134/s1063782620090195

Cited by 4 publications

(1 citation statement)

References 26 publications

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“…We suppose that the doping level in undoped GaAs is negligible in terms of contribution to absorption since the intrinsic carrier concentration is 2.1•10 6 cm −3 [26], which is much smaller than that in the doped GaAs. In addition, as we noted in our previous work [19], the latest experimental data [27] for gallium arsenide in the frequency range of ∼ 10 12 Hz give a value of the loss tangent of ∼ 3•10 -4 . In this situation, the losses will have no impact on detection.…”

Section: Modelingsupporting

confidence: 71%

Enhanced Bolometric Detection of THz Signals by a Resonant Structure for Inclined Radiation Incidence

Nikiforova,

Bogatskaya,

Popov

2023

Photonics

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In this work, we consider the possibility of enhancing terahertz bolometric detection efficiency using resonant structures in the case of an inclined incidence of radiation. The structures are made of a sequence of doped and undoped semiconductors, including epsilon-near-zero areas. Undoped regions act as electromagnetic resonators, thus ensuring resonant signal penetration through the opaque (doped) regions of the structure. A set of epsilon-near-zero areas can ensure substantial enhancements to the electric field in the material. In the doped regions, absorption occurs. The structure described above can provide efficient resonant energy absorption for a wide range of angles of incidence. The numerical calculations based on the solution of the Helmholtz equation have shown that the studied resonant structures ensure the absorption of up to 50% of the incident radiation energy for a 60-degree incidence.

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Section: Modelingsupporting

confidence: 71%

Enhanced Bolometric Detection of THz Signals by a Resonant Structure for Inclined Radiation Incidence

Nikiforova,

Bogatskaya,

Popov

2023

Photonics

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Chemistry of Semiconductor Impurity Processing

2023

Chemistry of Semiconductors

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This chapter is devoted to the study of the various defect engineering processes to which a silicon sample is subjected during the fabrication of a microelectronic device. The first case discussed is that of thermal annealing processes, adopted to recover the mechanical stress generated in the material during the device fabrication process, or the irradiation damage of ion-implanted layers for surface doping. The further, and more important, case considered is that of impurity deactivation by hydrogenation or by phosphorus and aluminium gettering.

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Generation of Terahertz Radiation in InP:Fe Crystals Due to Second-Order Lattice Nonlinearity

et al. 2021

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Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons

Cited by 4 publications

References 26 publications

Enhanced Bolometric Detection of THz Signals by a Resonant Structure for Inclined Radiation Incidence

Enhanced Bolometric Detection of THz Signals by a Resonant Structure for Inclined Radiation Incidence

Chemistry of Semiconductor Impurity Processing

Generation of Terahertz Radiation in InP:Fe Crystals Due to Second-Order Lattice Nonlinearity

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