Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers

Abstract

InAs/GaAs quantum dot (QD) lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy (MBE) system. In addition, strained superlattices were used to prevent threading dislocations from propagating to the active region of the laser. The as-grown material quality was characterized by the transmission electron microscope, scanning electron microscope, X-ray diffraction, atomic force microscope, and photoluminescence spectroscopy. The results show that a high-quality GaAs buffer with few dislocations was obtained by the growth scheme we developed. A broad-area edge-emitting laser was also fabricated. The O-band laser exhibited a threshold current density of 540 A/cm2 at room temperature under continuous wave conditions. This work demonstrates the potential of large-scale and low-cost manufacturing of the O-band InAs/GaAs quantum dot lasers on silicon substrates.

Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate

“…Recent performance results of InAs quantum dot lasers grown on the Si substrate from different research groups. ,,,− Our work was measured under pulsed mode at room temperature. Colored box is a guide for the trend.…”

Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories

“…The formation of a solid alloy from different atom species results in a disorder and material parameter fluctuation on a micro scale, comparable with few interatomic distances [ 62 , 63 , 64 , 65 ]. However, typical SAQD sizes of several nanometers [ 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ] significantly exceed this distance, and this fact allows us to neglect the disorder and consider a solid alloy as a material with averaged constant parameters governed by the alloy composition. Material parameters for quaternary alloys of the A x B 1− x C y D 1− y type were calculated in the quadratic approach using expression [ 33 ]: where x and y are the fractions of corresponding atoms, P ij is the parameter value for binary compounds and C ijk is the bowing parameters for the corresponding ternary alloys.…”

“…One of the crucial advantages of this self-organized growth mode is the formation of a nanoscale objects array without using nanoscale lithography. The flexibility of the SAQD energy spectrum, caused by quantum confinement effects and the alloy composition variation, makes them widely applicable in broad areas of modern electronics and optoelectronics [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ]. The energy bands offset at an SAQD/matrix heterointerface provide a charge carrier localization into SAQDs, and that opens up the prospective of using SAQDs for charge storage in non-volatile memory cells.…”

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

“…Germanium has been widely employed in silicon photonics in recent decades, not only as a core functional material for infrared optoelectronics with an absorption edge at or beyond 1550 nm, but also as an essential substrate or buffer for epitaxial growth of other important semiconductor materials such as GeSn, SiGeSn and GaAs [1][2][3][4][5]. Multiple technical routes of growing Ge buffers on Si have been explored by different research groups, including molecular beam epitaxy 3 C Xie and Y Li are of equal contribution to the manuscript.…”