Investigation into the temperature dependence of electron leakage in GaN-based blue laser diode structures by numerical simulation

Lee, Bohae; Ryu, Han-Youl

doi:10.1007/s11082-022-04440-x

Opt Quant Electron

2022

DOI: 10.1007/s11082-022-04440-x

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Investigation into the temperature dependence of electron leakage in GaN-based blue laser diode structures by numerical simulation

Bohae Lee

Han-Youl Ryu

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Cited by 2 publications

References 41 publications

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High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution

Zhang,

Zeng,

Kang

et al. 2024

Advanced Photonics Research

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Gallium nitride (GaN)‐based semiconductor laser diodes (LDs) have garnered significant attention due to their promising applications. However, high‐power LDs face serious degradation issues that limit their practical use. This study investigates the degradation factors of 437 nm and 6.3 W LDs by comparing light–current–voltage (L–I–V) characteristics, transmission electron microscopy (TEM), cathodoluminescence (CL), and secondary ion mass spectroscopy (SIMS) before and after 1000‐h aging. The diffusion of mirror coating from the resonant cavity surface is identified as a key factor contributing to high‐power LD degradation, which has not been reported in milliwatt‐level LDs. Meanwhile, the mechanisms behind the LD degradation are profiled and summarized together with the diffusion and other factors. On basis of the mechanism exploration, an anti‐aging technology for high‐power GaN‐based LDs is developed by using aluminum nitride for passivation layer and sapphire materials for mirror film. This anti‐aging technology has been verified, and a nearly ten‐time degradation suppression is achieved from 1000 h. This study elucidates the degradation mechanisms of high‐power GaN LDs and provides an effective technology to extend their lifespan, thereby prompting the practical applications of high‐power LDs.

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High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution

Zhang,

Zeng,

Kang

et al. 2024

Advanced Photonics Research

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Hole transport improvement in CdZnO/ZnO light emitting diodes with wedge shaped electron blocking layers

Kim

2023

J. Korean Phys. Soc.

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Investigation into the temperature dependence of electron leakage in GaN-based blue laser diode structures by numerical simulation

Cited by 2 publications

References 41 publications

High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution

High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution

Hole transport improvement in CdZnO/ZnO light emitting diodes with wedge shaped electron blocking layers

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