Investigation of acceleration factors of the HV-H3TRB test on 3.3kV SiC SBDs

Hatori, Kenji; Ebihara, Kohei; Ishimoto, Kazufumi; Tsuda, Ryo; Soltau, Nils; Idaka, Shiori; Wiesner, Eugen; Schönewolf, Stefan; Schuster, Oskar; Hanf, Michael

doi:10.23919/epe23ecceeurope58414.2023.10264596

2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) 2023

DOI: 10.23919/epe23ecceeurope58414.2023.10264596

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Investigation of acceleration factors of the HV-H3TRB test on 3.3kV SiC SBDs

Kenji Hatori,

Kohei Ebihara,

Kazufumi Ishimoto

et al.

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2024

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Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation

Hanf,

Hoffmann,

Brunko

et al. 2024

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Recently, silicon carbide (SiC) power modules of the 3.3 kV voltage class became available and are a promising candidate to replace silicon power modules in traction applications. However, the more than three times higher Young’s Modulus compared to silicon leads to a reduced lifetime under thermo-mechanical stress. This could pose a significant obstacle in their implementation, since traction applications are particularly demanding in their mission profiles with respect to load cycling, but also to environmental conditions. Thus, the thermo-mechanical stress is not just limiting the lifetime itself, but might also promote the humidity induced degradation due to delamination or micro-cracks. In this work, multiple power cycling tests at different temperature swings on 3.3 kV SiC MOSFET chips in a power module were performed, to assess their ruggedness under thermo-mechanical stress. Before or afterwards, these modules were tested under standard HV-H3TRB conditions to verify the interaction between thermo-mechanical and humidity stress on the robustness of the modules.

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Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation

Hanf,

Hoffmann,

Brunko

et al. 2024

SSP

View full text Add to dashboard Cite

show abstract

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Investigation of acceleration factors of the HV-H3TRB test on 3.3kV SiC SBDs

Cited by 1 publication

References 10 publications

Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation

Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation

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